Results 251 to 260 of about 2,657,770 (315)

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source

Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors

Advanced Science, EarlyView.
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li, Renjie Hu, Xiangping Zhao, Xi Wang, Wei Qin   +4 more
wiley   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Delocalized Charge Transport in Thermoelectric Composites of Semiconducting Carbon Nanotubes Wrapped with a P‐Type Polymer

Advanced Electronic Materials, EarlyView.
Composites made of semiconducting carbon nanotubes and p‐type polymers, when adequately doped with molecular dopants, can exhibit highly delocalized charge carrier transport, showing high thermoelectric performances. The efficient charge delocalization is enabled by the reduced coulombic binding energy at high carrier concentration and the small ...
Ye Liu, Wenchao Yang, Anirudh Sharma, Diego Rosas‐Villalva, Han Xu, Md Azimul Haque, Frédéric Laquai, Derya Baran   +7 more
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Improving the Thermoelectric Properties of Conjugated Polymer Thin Films by Dip Coating – but not through Alignment

Advanced Electronic Materials, EarlyView.
The study demonstrates that dip coating at lower speeds significantly enhances the thermoelectric performance of P3HT by improving electrical conductivity. Contrary to expectations, this improvement is seemingly not due to polymer alignment but rather to better structural order achieved during slower solvent evaporation at lower dip coating speeds ...
Morteza Shokrani, Andrey Alekseevich Butkevich, Martijn Kemerink   +2 more
wiley   +1 more source

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors

Advanced Electronic Materials, EarlyView.
A novel n‐dopant, phosphazenium tetrafluoroborate (P2BF4), is introduced for efficient n‐doping in N2200, P(PzDPP‐CT2) and other organic semiconductors (OSCs). P2BF4‐doped OSC films exhibit exceptional thermal stability, maintaining electrical conductivity after heating at > 150 °C for 24 h. This stability allows organic thermoelectric devices based on
Huan Wei, Jing Guo, Heng Liu, Tong Wu, Ping‐An Chen, Chuanding Dong, Shu‐Jen Wang, Stefan Schumacher, Yugang Bai, Ting Lei, Suhao Wang, Yuanyuan Hu   +11 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source