Results 61 to 70 of about 76,567 (293)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Spatial control of doping in conducting polymers enables complementary, conformable, implantable internal ion-gated organic electrochemical transistors

open access: yesNature Communications
Complementary transistors are critical for circuits with compatible input/output signal dynamic range and polarity. Organic electronics offer biocompatibility and conformability; however, generation of complementary organic transistors requires ...
Duncan J. Wisniewski   +7 more
doaj   +1 more source

Chemical potential in disordered organic materials

open access: yes, 2012
Charge carrier mobility in disordered organic materials is being actively studied, motivated by several applications such as organic light emitting diodes and organic field-effect transistors. It is known that the mobility in disordered organic materials
Sharma, A., Sheinman, M.
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

open access: yesAIP Advances
Transistors find application within various integrated circuits (ICs) alongside a multitude of electronic devices. These ICs have become integral components in contemporary systems.
Manish Kumar Singh   +2 more
doaj   +1 more source

Fully 3D-printed organic electrochemical transistors

open access: yesnpj Flexible Electronics, 2023
Organic electrochemical transistors (OECTs) are being researched for various applications, ranging from sensors to logic gates and neuromorphic hardware.
Matteo Massetti   +10 more
doaj   +1 more source

Synthesis and characterization of copper, polyimide and TIPS-pentacene layers for the development of a solution processed fibrous transistor [PDF]

open access: yes, 2011
A study was performed for the development of a flexible organic field effect transistor starting from a polyester fibre as substrate material. Focus of subsequent layer deposition was on low temperature soluble processes to allow upscaling.
Bruneel, Els   +5 more
core   +3 more sources

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

open access: yesAdvanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park   +6 more
wiley   +1 more source

Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?

open access: yesAdvanced Functional Materials, EarlyView.
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee   +7 more
wiley   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee   +11 more
wiley   +1 more source

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