Results 141 to 150 of about 428,560 (344)

Non‐Uniform Space‐Time‐Coding Modulation for Low‐Complexity Diagnostics of Reconfigurable Intelligent Surfaces

open access: yesAdvanced Electronic Materials, EarlyView.
A diagnostic method for reconfigurable intelligent surfaces (RIS) based on non‐uniform space‐time‐coding modulation is presented. Fault localization is achieved via amplitude‐only spectral measurements, eliminating the need for complex signal processing. A one‐to‐one mapping between harmonic components and RIS elements enables accurate detection.
Xiao Qing Chen   +8 more
wiley   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár   +12 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Research on the spatial state and electrical distance variation of overhead transmission lines with changes in foundation

open access: yesAIP Advances
This article conducts a thorough investigation into the spatial state variations of overhead lines in response to foundational changes, as well as alterations in the electrical distance between the conductor and both the ground and tower structures ...
Shuai Wang   +4 more
doaj   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

Shedding Light on Common Misinterpretations in Photocatalyst Characterization

open access: yesAdvanced Energy Materials, EarlyView.
For heterogeneous semiconductor‐based photocatalysts, Marschall et al. highlight common misconceptions in material synthesis, characterization, and performance evaluation, together with detailed explanations on how to avoid them. The guidelines thus presented can help to improve reporting of photocatalyst performance in environmental applications, such
Roland Marschall   +2 more
wiley   +1 more source

Making predictions for overhead power lines applying predictive analytics

open access: yesВестник Северо-Кавказского федерального университета
Introduction. Currently, failures are one of the main and urgent problems for the normal functioning of power supply systems, they are at first glance unpredictable, however, in addition to accidental, there are failures that occur according to some ...
Yu. N. Kondrashova   +2 more
doaj   +1 more source

Exploring Quantum Support Vector Regression for Predicting Hydrogen Storage Capacity of Nanoporous Materials

open access: yesAdvanced Intelligent Discovery, EarlyView.
In this study we employed support vector regressor and quantum support vector regressor to predict the hydrogen storage capacity of metal–organic frameworks using structural and physicochemical descriptors. This study presents a comparative analysis of classical support vector regression (SVR) and quantum support vector regression (QSVR) in predicting ...
Chandra Chowdhury
wiley   +1 more source

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