Results 111 to 120 of about 43,659 (249)

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

Anchoring overshoot in reality

open access: yes
With 1.5 °C long-term warming virtually certain to be reached in the next decade or two, scientists are increasingly exploring scenarios that exceed it and then supposedly quickly return to a “safe” space to minimize risks.
Juanita von Rothkirch   +3 more
core   +1 more source

Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride

open access: yes, 1997
Using an ensemble Monte Carlo approach, ballistic transport and velocity overshoot effects are examined in InN and compared with those in GaN and GaAs. It is found that the peak overshoot velocity is in general greater than both GaN and GaAs. Furthermore,
B. E. Foutz   +4 more
core   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Effects of envelope overshoot on stellar models

open access: yes, 1991
We show that a certain amount of non-local overshoot at the base of the outer convective envelope of low mass stars, while climbing along the red giant branch (RGB) toward central He ignition, explains the shift of about 0.4 V mag required to bring the ...
Alongi, M.   +3 more
core   +1 more source

Permafrost carbon–climate feedback amplifies Earth system tipping risks

open access: yesEnvironmental Research Letters
Global warming leads to widespread permafrost thaw and subsequent emissions of carbon dioxide and methane, driving the permafrost carbon–climate feedback (PCF) which amplifies climate change.
Norman J Steinert   +4 more
doaj   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Harnessing the VO2 Phase Transition for Automatic Gain Control in Transimpedance Amplifiers

open access: yesAdvanced Electronic Materials, EarlyView.
A nanoscale VO2‐based volatile switch integrated into a transimpedance‐amplifier feedback loop dynamically lowers gain when input current rises, preventing saturation and extending dynamic range. Rapid self‐recovery restores high sensitivity without external reset circuitry.
Amir Gildor   +3 more
wiley   +1 more source

Revealing Two Operation Modes of Perovskite Light‐Emitting Diodes Through Overshoot Pulses

open access: yesAdvanced Photonics Research
In some applications, perovskite light‐emitting diodes (PeLEDs) shall operate in pulsed mode. The generation of high‐intensity light pulses requires PeLED driving by high‐power electrical pulses, which can lead to deterioration of PeLED performance and ...
Rokas Gegevičius   +6 more
doaj   +1 more source

InGaP/GaAs/InGaAs Multijunction Flexible Photovoltaics With Chemical Robustness and Radiation Hardness for Unassisted Electrocatalysis and Space Applications

open access: yesAdvanced Energy Materials, EarlyView.
A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong   +10 more
wiley   +1 more source

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