Results 91 to 100 of about 505 (135)

A study on mechanism of resistance distribution characteristics of oxide-based resistive memory. [PDF]

Sci Rep, 2019
Hur JH, Kim DK.
europepmc   +1 more source

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]

Nanomaterials (Basel)
Wang YC, Chen KH, Kao MC, Chen HC, Cheng CM, Huang HX, Huang KC.   +6 more
europepmc   +1 more source

Design of an RRAM-Based Joint Model for Embedded Cellular Smartphone Self-Charging Device. [PDF]

Micromachines (Basel)
Vishwakarma A, Vishwakarma A, Komelj M, Vishvakarma SK, Hübner M.   +4 more
europepmc   +1 more source

Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer. [PDF]

ACS Appl Mater Interfaces
Liu PT, Chiu YC, Hsu CC, Gan KJ, Ruan DB, Su SJ, Chang SW.   +6 more
europepmc   +1 more source

Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays. [PDF]

Front Neurosci, 2019
Hirtzlin T, Bocquet M, Penkovsky B, Klein JO, Nowak E, Vianello E, Portal JM, Querlioz D.   +7 more
europepmc   +1 more source

simulations and modeling of HfO2-based OxRAM memories

Le calcul neuromorphique devient une réalité grâce au développement de nouveaux composants tels que les « memristors ». Parmi eux, les mémoires résistives (RRAM) sont particulièrement prometteuses pour les circuits neuromorphiques en raison de leur endurance, leur rapidité de commutation, leur faible coût de fabrication, et leur capacité à être ...
openaire   +1 more source

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications. [PDF]

J Comput Electron, 2017
Ielmini D, Milo V.
europepmc   +1 more source

Binary Addition in Resistance Switching Memory Array by Sensing Majority. [PDF]

Micromachines (Basel), 2020
Reuben J.
europepmc   +1 more source

Implementation of unsupervised learning mechanisms on OxRAM devices for neuromorphic computing applications

, 2019
The present thesis compiles the results of the research oriented to provide a methodology for the electrical characterization, modeling and simulation of resistive switching devices, taking into consideration neuromorphic applications based on unsupervised learning This is widely demanded today as a low-consumption solution to the following issues: on ...
openaire   +1 more source