Results 101 to 110 of about 505 (135)

A neuromorphic processor with on-chip learning for beyond-CMOS device integration. [PDF]

Nat Commun
Greatorex H, Richter O, Mastella M, Cotteret M, Klein P, Fabre M, Rubino A, Soares Girão W, Chen J, Ziegler M, Bégon-Lours L, Indiveri G, Chicca E.   +12 more
europepmc   +1 more source

Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory. [PDF]

Materials (Basel), 2019
La Torraca P, Puglisi FM, Padovani A, Larcher L.   +3 more
europepmc   +1 more source

Filamentary Resistive Switching Mechanism in CuO Thin Film-Based Memristor. [PDF]

Materials (Basel)
Ozga M, Mroczynski R, Matus K, Arabasz S, Witkowski BS.   +4 more
europepmc   +1 more source

A Collective Study on Modeling and Simulation of Resistive Random Access Memory. [PDF]

Nanoscale Res Lett, 2018
Panda D, Sahu PP, Tseng TY.
europepmc   +1 more source

A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects. [PDF]

Front Neurosci
Kim K, Song MS, Hwang H, Hwang S, Kim H.
europepmc   +1 more source

Supervised spike sorting feasibility of noisy single-electrode extracellular recordings: Systematic study of human C-nociceptors recorded via microneurography. [PDF]

PLoS One
Troglio A, Konradi P, Fiebig A, Pérez Garriga A, Röhrig R, Dunham J, Kutafina E, Namer B.   +7 more
europepmc   +1 more source

Hybrid CMOS-OxRAM RNG circuits

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016
Compact, low-power random number generators (RNG) are essential for applications such as stochastic, bio-inspired-computing and secure system data encryption/communication. We demonstrate for the first time highly scalable RNG circuits based on the reset-state transient current fluctuation of resistive switching OxRAM devices.
Shubham Sahay, Manan Suri, Ashwani Kumar, Vivek Parmar   +3 more
openaire   +1 more source

OxRAM Resistive Switching for DR Improvement

2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
On-chip presence of emerging nonvolatile resistive memory devices provide opportunities to perform different types of computing and storage operations with several advantages. A unique application of oxide based resistive memory (OxRAM) devices in CMOS Image Sensors (CIS) for improvement of pixel dynamic range (DR) is proposed in this paper. In CIS, DR
Ashwani Kumar, Mukul Sarkar, Manan Suri
openaire   +1 more source

Under-exposure control in CMOS-OxRAM pixel

2016 3rd International Conference on Emerging Electronics (ICEE), 2016
In this paper we build on our previous work on the capacitive use of OxRAM devices inside CMOS image sensors (CIS). Previously we had shown how capacitive properties of OxRAM devices can be exploited to overcome the issue of over-exposure (bright-light). In this work, we show a methodology for correction of under-exposure (dim-light).
Ashwani Kumar, Manan Suri
openaire   +1 more source

Compact modeling solutions for OxRAM memories

2013 IEEE Faible Tension Faible Consommation, 2013
Emerging non-volatile memories based on resistive switching mechanisms pull intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (namely OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories.
Bocquet, Marc, Deleruyelle, Damien, Aziza, Hassen, Muller, Christophe, Portal, Jean-Michel   +4 more
openaire   +2 more sources