Results 111 to 120 of about 505 (135)

Computer simulation of radiation effects on non-volatile OxRAM memory

Modeling of systems and processes, 2022
The paper discusses the issues of ensuring the stability of non-volatile memory under radiation exposure. Experimental studies of the durability of memristors were carried out. The switching mechanism on TaOh memristors is similar, but not identical to the TiO2 memristor.
O. Oksyuta, Tatyana Skvortsova, N. Gamzatov, Nikolay Litvinov, Roman Ryazancev, Maksim Solodilov, Pavel Chubunov   +6 more
openaire   +1 more source

Hybrid CMOS-OxRAM Image Sensor for Overexposure Control

2016 IEEE 8th International Memory Workshop (IMW), 2016
This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously.
Ashwani Kumar, Mukul Sarkar, Manan Suri
openaire   +1 more source

(Invited) Reliability and Scaling Perspectives of HfO₂-Based OxRAM

ECS Transactions, 2020
OxRAM is a strong candidate to replace embedded Flash technology at scaled nodes. This is justified by several considerations but mainly driven by the low cost of integration and very high compatibility with standard CMOS technology. Yet OxRAM faces tremendous challenges in terms of reliability, variability and scaling.
Cagli, Carlo, Sandrini, Jury, Sassine, Gilbert, Robayo, Diego, Hammad, Ismail, Molas, Gabriel, Gaillard, Fred   +6 more
openaire   +2 more sources

OxRAM RNG Circuits Exploiting Multiple Undesirable Nanoscale Phenomena

IEEE Transactions on Nanotechnology, 2017
Compact, low-power random number generators (RNG) are essential for applications such as stochastic-, bioinspired-computing, data-encryption, cryptography in communication and security systems. We demonstrate two highly scalable hybrid CMOS-OxRAM RNG implementations based on single OxRAM and 2-OxRAM -circuits. We show how multiple undesirable nanoscale
Shubham Sahay, Ashwani Kumar, Vivek Parmar, Manan Suri   +3 more
openaire   +1 more source

OXRAM based ELM architecture for multi-class classification applications

2015 International Joint Conference on Neural Networks (IJCNN), 2015
In this paper, we show how metal-oxide (OxRAM) based nanoscale memory devices can be exploited to design low-power Extreme Learning Machine (ELM) architectures. In particular we fabricated HfO 2 and TiO 2 based OxRAM devices, and exploited their intrinsic resistance spread characteristics to realize ELM hidden layer weights and neuron biases.
Manan Suri, Vivek Parmar, Gilbert Sassine, Fabien Alibart   +3 more
openaire   +1 more source

Multiple Binary OxRAMs as Synapses for Convolutional Neural Networks

2017
Oxide-based resistive memory (OxRAM) devices find applications in memory, logic, and neuromorphic computing systems. Among the different dielectrics proposed in OxRAM stacks, hafnium oxide, HfO\(_{2}\), attracted growing interest because of its compatibility with typical BEOL advanced CMOS processing and promising performances in terms of endurance ...
Vianello, E., Garbin, D., Bichler, O., Piccolboni, G., Molas, G., Salvo, B., Perniola, L.   +6 more
openaire   +2 more sources

Programming scheme based optimization of hybrid 4T-2R OxRAM NVSRAM

Semiconductor Science and Technology, 2017
In this paper, we present a novel single-cycle programming scheme for 4T-2R NVSRAM, exploiting pulse engineered input signals. OxRAM devices based on 3 nm thick bi-layer active switching oxide and 90 nm CMOS technology node were used for all simulations. The cell design is implemented for real-time non-volatility rather than last-bit, or power-down non-
Swatilekha Majumdar, Sandeep Kaur Kingra, Manan Suri   +2 more
openaire   +1 more source

OxRAM BER Scaling Trends on 4 kb Mixed-Diameter Test Vehicle

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020
In this work we present a 4 kb OxRAM test structure which includes devices of diameter ranging from 30 nm to 170 nm. Thanks to a quasi-continuous range of cell sizes, this matrix allows to evaluate the impact of aggressive cell scaling over several performance metrics within the same test vehicle. Hereafter we study mainly the endurance results.
Sandrini, J., Cagli, C., Grenouillet, L., Castellani, N., Meli, V., Gaillard, F.   +5 more
openaire   +1 more source

Statistics of disturb events in OxRAM devices — A phenomenological model

2017 IEEE International Reliability Physics Symposium (IRPS), 2017
Read disturb (RD) is a key reliability metric for OxRAM devices, more so in the high resistance state (HRS), when small voltages might be sufficient to perturb the oxygen vacancy configuration in the conducting filament that may have undergone “shrinkage” or “rupture” during the RESET sweep.
openaire   +1 more source

Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

IEEE Transactions on Electron Devices, 2020
In this brief, we present a semi-empirical RC -circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of ...
Swatilekha Majumdar, Ying Chen, Boris Hudec, Tuo-Hung Hou, Manan Suri   +4 more
openaire   +1 more source