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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
2015In this paper, the use of HfO 2 -based oxide-based resistive memory (OxRAM) devices operated in binary mode to implement synapses in a convolutional neural network (CNN) is studied. We employed an artificial synapse composed of multiple OxRAM cells connected in parallel, thereby providing synaptic efficacies.
Garbin, Daniele +7 more
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Resistive Switching Study in OxRAM by Conductive Atomic Force Microscopy in Vacuum Environment
2018Singh, A. +2 more
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