Gestión de jerarquías de memoria híbridas a nivel de sistema [PDF]
, 2017 Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and ...
Perumkunnil Komalan, Manu
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A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory [PDF]
, 2018 Because of the atomic nature of the system under study, an estimation of the temperature of the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be obtained by means of indirect methods, usually electrothermal ...
Miranda, Enrique +3 more
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An unsupervised and probabilistic approach to Pavlov's dog experiment with OxRAM devices [PDF]
Microelectronic Engineering, 2019 In this work, a potential basis for implementing unsupervised associative learning in two or more memristors within neuromorphic architectures is proposed. The experimental demonstration is carried out by means of emulating the Pavlov's dog classical conditioning experiment with two OxRAM devices, in which the dependence of the probability of ...
Martin Martinez, Javier +5 more
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An adaptive threshold neuron for recurrent spiking neural networks with nanodevice hardware implementation. [PDF]
Nat Commun, 2021 Shaban A, Bezugam SS, Suri M.
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Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation. [PDF]
ACS Nano, 2022 Vogel T +26 more
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Elucidating Experimental Device-to-Device Variability in OxRAM Based on TCAD Modeling
2024 IEEE European Solid-State Electronics Research Conference (ESSERC)The SET and RESET are the fundamental operations in oxide resistive memory devices (OxRAM). Combining experiments and advanced TCAD simulation, we examined the device-to-device variability and switching kinetics of these operations in HfO2-based OxRAM.
Hirchaou, Youssef +8 more
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Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide. [PDF]
ACS Appl Electron Mater, 2023 Kaiser N +8 more
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, 1985 "PhewUniversity" is a satirical issue of the student newspaper, "New University." It was published in 1985 as the final issue of volume ...
University of California, Irvine. Associated Students
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Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications. [PDF]
Micromachines (Basel), 2022 Abbas H, Li J, Ang DS.
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Experimental Investigation of Programmed State Stability in OxRAM Resistive Memories
, 2018 Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes (typically TiN, TaN, W but also Pt, Ir). This thesis describes the experimental investigation performed on OxRAM memories
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