Results 201 to 210 of about 83,687 (300)
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Oxygen Vacancy Dynamics in Different Switching Modes of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2-δ</sub>. [PDF]
Knabe J +14 more
europepmc +1 more source
Balancing Electrons to Break the Activity‐Selectivity Trade‐Off in H2O2 Electrosynthesis
Carrier‐concentration balancing in CuS is achieved by coupling cobalt dopants with cobalt vacancies, converting CuS from p‐ to n‐type to accelerate 2e− ORR while withdrawing excess carriers to optimize *OOH binding for H2O2 desorption. The catalyst reaches 8.14 mol g−1 h−1 with >84% selectivity in 1.0 M KOH and drives robust electro‐Fenton dye ...
Hangning Liu +11 more
wiley +1 more source
Oxygen Vacancy Defect Engineering for Transverse Thermoelectric Enhancement: a Novel Extrinsic Pathway beyond Intrinsic Approaches. [PDF]
Kim MY +7 more
europepmc +1 more source
A tandem gas diffusion electrode (GDE) leveraging hierarchically engineered microgranules enables efficient CO2 electroreduction under dilute CO2 conditions. A key innovation lies in the solvent‐free precision assembly of metal–organic‐frameworks, carbon nanotubes, and copper nanoparticles.
Kai‐Jen Wu +7 more
wiley +1 more source
Enhanced Light Response Performance of Ceria-Based Composites with Rich Oxygen Vacancy. [PDF]
Li Y, Bian X, Dong H, Chang H, Wu W.
europepmc +1 more source
The hidden role of Cd segregation at grain boundaries is revealed in p‐type Mg3Sb2 by atom probe tomography and other advanced characterizations. Grain boundary Cd enrichment suppresses the SbMg+ hole‐killer formation and lowers potential barriers, enhancing electrical conductivity.
Zhou Li +12 more
wiley +1 more source
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li +5 more
wiley +1 more source
Designing Ultra-Narrow-Band Red Phosphor via Oxygen Vacancy Engineering for Transparent Display Application. [PDF]
Wang W +8 more
europepmc +1 more source
A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen +16 more
wiley +1 more source

