Results 151 to 160 of about 95,427 (173)
International Congress of Drug Therapy in HIV Infection 23-26 October 2016, Glasgow, UK. [PDF]
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, 2020
By the Minamata Convention on Mercury, regulation on Mercury use will be stricter from this year of 2020 and safe AlGaN-based ultraviolet (UV) light sources are urgently needed for killing of SARS-...
Muhammad Ajmal Khan +5 more
semanticscholar +1 more source
By the Minamata Convention on Mercury, regulation on Mercury use will be stricter from this year of 2020 and safe AlGaN-based ultraviolet (UV) light sources are urgently needed for killing of SARS-...
Muhammad Ajmal Khan +5 more
semanticscholar +1 more source
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
Photonics Research, 2019The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm2.
J. Ruschel +9 more
semanticscholar +1 more source
Monochromatic electron emission from CeB6 (310) cold field emitter
, 2020Observation at low voltage using scanning electron microscopes (SEMs) enables the characterization of surface details on specimens on a nanometer scale and is widely used in science and industry. However, the energy width of the electron source restricts
K. Kasuya +6 more
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Journal of Clinical Oncology
4110 Background: The phase 3 CARES-310 trial is the first to demonstrate significant progression-free survival (PFS) and overall survival (OS) benefits with immunotherapy plus an anti-angiogenic tyrosine kinase inhibitor (TKI) over standard TKI as first ...
Arndt Vogel +19 more
semanticscholar +1 more source
4110 Background: The phase 3 CARES-310 trial is the first to demonstrate significant progression-free survival (PFS) and overall survival (OS) benefits with immunotherapy plus an anti-angiogenic tyrosine kinase inhibitor (TKI) over standard TKI as first ...
Arndt Vogel +19 more
semanticscholar +1 more source
Applied Physics Express, 2019
A deeply-scaled GaN-on-Si high electron mobility transistor with a record-high cut-off frequency (fT) of 310 GHz has been demonstrated. The device has an InAlN/GaN heterojunction structure, a source–drain spacing of 400 nm, and a gate length of 40 nm ...
Hanlin Xie +5 more
semanticscholar +1 more source
A deeply-scaled GaN-on-Si high electron mobility transistor with a record-high cut-off frequency (fT) of 310 GHz has been demonstrated. The device has an InAlN/GaN heterojunction structure, a source–drain spacing of 400 nm, and a gate length of 40 nm ...
Hanlin Xie +5 more
semanticscholar +1 more source
Journal of Chemical and Engineering Data, 2018
Comparative solubility tests at 296 ± 1 K and 310 ± 1 K in 11 solvents, PAMPA permeability measurements at 296 ± 1 K and 310 ± 1 K in water, FaSSIF-V2 and FeSSIF-V2 media, thermoanalytical investig...
T. Solymosi +7 more
semanticscholar +1 more source
Comparative solubility tests at 296 ± 1 K and 310 ± 1 K in 11 solvents, PAMPA permeability measurements at 296 ± 1 K and 310 ± 1 K in water, FaSSIF-V2 and FeSSIF-V2 media, thermoanalytical investig...
T. Solymosi +7 more
semanticscholar +1 more source

