Results 221 to 230 of about 139,342 (303)

Deciphering the Dynamic Balance Between Solvation Strength and Polysulfides Reaction Heterogeneity in Practical Lithium‐Sulfur Batteries

open access: yesAdvanced Science, EarlyView.
A weakly solvating fluorinated cosolvent (1200ET) enables precise solvation‐power regulation in Li–S batteries, decoupling interfacial stabilization from sulfur redox kinetics. This approach suppresses polysulfide dissolution while preserving reaction kinetics, leading to a stable Li metal interface and high‐energy multilayer pouch cells, revealing a ...
Huidong Dai   +9 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

open access: yesAdvanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

open access: yesAdvanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

open access: yesAdvanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen   +4 more
wiley   +1 more source

Home - About - Disclaimer - Privacy