Results 191 to 200 of about 406,641 (295)

From Thin Films to Nanodots: Bottom‐Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures

open access: yesAdvanced Materials, EarlyView.
Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu   +14 more
wiley   +1 more source

Perceptions of Parental Leave Among Ophthalmologists.

open access: yesJAMA Ophthalmol, 2023
Kalra K, Delaney TV, Dagi Glass LR.
europepmc   +1 more source

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

open access: yesAdvanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren   +6 more
wiley   +1 more source

Attitudes of Surgical Trainees and Faculty Towards Parental Leave During Surgical Training. [PDF]

open access: yesJ Surg Educ
Acker SN   +9 more
europepmc   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications

open access: yesAdvanced Materials, EarlyView.
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li   +6 more
wiley   +1 more source

Parental Leave in the Netherlands [PDF]

open access: yes
Chantal Remery, Janneke Plantenga
core  

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Parental Leave Benefits and Maternal Postpartum Mental Health in Sweden.

open access: yesJAMA Netw Open
Heshmati A   +3 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy