Results 261 to 270 of about 2,412,793 (347)

From Thin Films to Nanodots: Bottom‐Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures

open access: yesAdvanced Materials, EarlyView.
Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu   +14 more
wiley   +1 more source

“Tear‐And‐Stack” Twisted SrTiO3 Moiré Superlattices for Precise Interfacial Reconstruction and Polar Topology

open access: yesAdvanced Materials, Volume 38, Issue 9, 12 February 2026.
The tear‐and‐stack method enables the creation of twisted SrTiO3 bilayers with accurate twist‐angle control, which yield atomically sharp oxide moiré superlattices with emergent exotic topological polar vortices, thereby opening a new pathway for twistronics based on 2D‐like non‐van der Waals oxides.
Yingli Zhang   +13 more
wiley   +1 more source

Parenting Early Intervention Programme Evaluation (Research report DFE-RR121(a)) [PDF]

open access: yes, 2011
Band, Sue   +8 more
core  

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

open access: yesAdvanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren   +6 more
wiley   +1 more source

Effect of parenting style on the emotional and behavioral problems among Chinese adolescents: the mediating effect of resilience. [PDF]

open access: yesBMC Public Health
Wang J   +10 more
europepmc   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

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