Results 201 to 210 of about 13,762,330 (288)

Interfacial Failure and Self‐Healing in Solid‐State Batteries

open access: yesAdvanced Materials, EarlyView.
Dynamic interfacial self‐healing offers an adaptive route to mitigate coupled mechanical, chemical, and electrochemical degradation in solid‐state batteries. This review connects evolving interfacial failure mechanisms with physical‐flow, chemical‐restoration, stimuli‐responsive, and electric‐field‐assisted repair strategies, highlighting targeted self‐
Xinxin Zhu   +8 more
wiley   +1 more source

Beyond Nanoporosity: A CO2‐Conditioned Glassy Matrix Contributes to the Brittle‐to‐Ductile Transition of Nanocellular Polyetherimide

open access: yesAdvanced Materials, EarlyView.
The mechanical performance of nanocellular polyetherimide cannot be explained by nanoporosity alone. It is shown that CO2 saturation and desorption leave a distinct mechanical signature in the glassy matrix before foaming. This matrix contribution provides a new route to understand and optimize the brittle to ductile transition in nanocellular polymers.
Félix Lizalde‐Arroyo   +7 more
wiley   +1 more source

Membrane‐Bound Multimodal Plasmonic Transducers for Noninvasive, In Situ Monitoring and Control of CAR T Cells Against Heterogeneous Solid Tumors

open access: yesAdvanced Materials, EarlyView.
Membrane‐bound multimodal transducers enable longitudinal ultrasound‐guided photoacoustic monitoring and in situ thermal control of CAR T cells in heterogeneous solid tumors. Imaging correlates T cell trafficking with tumor response, distinguishing responders from nonresponders.
Myeongsoo Kim   +14 more
wiley   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

open access: yesAdvanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho   +6 more
wiley   +1 more source

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