Results 221 to 230 of about 764,047 (274)

Information theory and thermodynamic study of a 2D harmonic oscillator modified by inverse-square potential. [PDF]

Sci Rep
Hsu CY, Singh PK, Onate CA, Yusupov Y, Jumanazarov D, Mahariq I, Rajhi AA.   +6 more
europepmc   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

Advanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li, Konstantin Köster, Katherine A. Mazzio, Yanan Sun, Annica I. Freytag, Deniz Wong, Christian Schulz, Götz Schuck, Volodymyr Baran, Alba San Jose Mendez, Marcin Zając, Payam Kaghazchi, Philipp Adelhelm   +12 more
wiley   +1 more source

Contrast-Enhanced Computed Tomography for Structural and Functional Evaluation of Ligament Microdamage. [PDF]

J Orthop Res
Tsurayya AH, Jäntti J, Paakkari P, Poimala M, Snyder BD, Grinstaff MW, Honkanen MKM, Mertano H, Ristaniemi A, Mäkelä JTA.   +9 more
europepmc   +1 more source

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

Advanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou, Yu Mao, Mengyao Chang, Ziyun Wang, Wenke Xie, Cuizhu Ye, Shanghai Wei, Lars Thomsen, Geoffrey I. N. Waterhouse   +8 more
wiley   +1 more source

Detecting the purely imaginary Fisher zeros of an Ising spin system on a quantum computer. [PDF]

Sci Rep
Kuzmak AR, Tkachuk VM.
europepmc   +1 more source

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

Advanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee, Osman Gul, Yeongjae Kwon, Jaeseok Jeong, Seokjoo Cho, Jihyeon Ahn, Jehee Yu, Cheolmin Kim, Donho Lee, Hyeonseok Han, Byeongju Lee, Jungrak Choi, Ji‐Hwan Ha, Yongrok Jeong, Kyungnam Kang, Ali Javey, Junseong Ahn, Inkyu Park   +17 more
wiley   +1 more source

Ramanujan's partition generating functions modulo ℓ. [PDF]

Ramanujan J
Bringmann K, Craig W, Ono K.
europepmc   +1 more source

Synergistic Compatibilization of CsPbBr3 Perovskites and HfO2 Nanocrystals for Hybrid Sensitized Nanoscintillators

Advanced Functional Materials, EarlyView.
Lead halide perovskite nanocrystals are promising scintillators but suffer from reabsorption losses and limited compatibility with high‐Z additives. Hybridization of CsPbBr3 nanocrystals with PbBr2‐passivated HfO2 nanoparticle sensitizers, achieved during or after synthesis, produces stable composites with maintained optical quality, improved ...
Francesco Bruni, Saptarshi Chakraborty, Andrea Fratelli, Abdessamad El Adel, Jordi Llusar, Francesco Carulli, Matteo L. Zaffalon, Chenger Wang, Vojtech Zabloudil, Etiennette Auffray, Francesco Meinardi, Leonardo Poletti, Laura Lazzarini, Daniela Manno, Anna Galli, Francesca Rossi, Ivan Infante, Sergio Brovelli   +17 more
wiley   +1 more source

NTAC: Neuronal type assignment from connectivity. [PDF]

Nat Commun
Schwartzman G, Jourdan B, García-Soriano D, Matsliah A.   +3 more
europepmc   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

Advanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods, Ho‐Chan Jang, Jun‐Hui Choi, Min Woo Kim, Hyunjin Lee, Tae‐Hoon Kim, Keun Heo, Hyung Jun Kwun, Taehun Lee, Yoon Kyeung Lee, Sang Hoon Lee, Seung‐Il Kim, Woonhyuk Baek, Sukang Bae, Ji‐Yun Moon, Jae‐Hyun Lee   +15 more
wiley   +1 more source