Results 81 to 90 of about 192,119 (253)
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald +7 more
wiley +1 more source
Decoding THz‐Driven Dynamic Fingerprints of Ferroelectric Nanotwin Networks
ABSTRACT Ultrafast polarization dynamics in ferroelectrics are of considerable interest for high‐speed tunable dielectrics and electro‐optics. Extended domain wall networks formed in ferroelectric twin nanodomains can support collective dynamics in the terahertz regime but require techniques that track polarization and strain evolution driven by ...
Xiaojiang Li +20 more
wiley +1 more source
This perspective critically evaluates non‐fluorinated diluents in local high‐concentration electrolytes, categorizing their solvation behavior, interfacial mechanisms, and sustainability potential to guide future electrolyte design for lithium metal batteries.
Yin Cui +8 more
wiley +1 more source
Modified Hilbert transform pair and Kramers-Kronig relations for complex permittivities [PDF]
Modified versions of the Hilbert transform pair and the Kramers-Kronig relations are derived for the complex permittivity of a plasma/dielectric medium which is singular at the frequency of the applied electric field equal to 0.
Cockrell, C. R.
core +1 more source
Orbital Electrowetting: From Continuous Droplet Transport to Programmable Microfluidics
This work comprehensively summarizes the mechanisms, recent advances, potential applications, and key challenges of orbital electrowetting. It highlights that integrating orbital electrowetting with conventional electrowetting is required to enable complete digital‐microfluidic workflows while simplifying platform architecture.
Jie Tan +7 more
wiley +1 more source
Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan +3 more
wiley +1 more source
On microelectromechanical systems with general permittivity
Dans le cadre de la thèse des modèles physico-mathématiques pour des microsystèmes électromécaniques avec une permittivité générale sont développés et analysés par des méthodes mathématiques modernes du domaine des équations aux dérivées partielles. En particulier ces systèmes sont à frontière libre et pour conséquence difficiles à traiter.
openaire +2 more sources
Morphology‐Controlled Silica Nanoparticle Coatings for Transparent Radiative Cooling
Transparent radiative cooling coatings are achieved by immobilizing solid and hollow silica spheres on glass. Particle morphology within sub‐monolayer coatings is shown to govern the trade‐off between visible and atmospheric window reflectance. Hollow‐sphere structures enable reduced thermal emission losses while preserving transparency, highlighting ...
Jefferson A. S. Lam +8 more
wiley +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source

