Results 161 to 170 of about 6,930,645 (293)

Polymer Concepts in Cellular Function

Advanced Science, EarlyView.
Miao Yu, Shikha Dhiman, Dorothee Dormann, Frauke Gräter, Katja Luck, Friederike Schmid, Andreas Walther, Edward A. Lemke   +7 more
wiley   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Mathematical models of phenomenological piezoelectricity [PDF]

Banach Center Publications, 1985
openaire   +2 more sources

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

Advanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra, Esteban Marulanda, Gustavo G. Vasques, Jaime Ferreira Oliveira, Pedro C. Sabino, Rebeca Brigato Delgado, Leticie Mendonça‐Fereira, Adriano R. V. Benvenho, Elisa Baggio‐Saitovitch, Ricardo K. Machado, Nicolas M. Kawahala, Julian Munevar, Marcos A. Avila, Felix G. G. Hernandez   +13 more
wiley   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

Advanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu, Chuantong Chen, Ran Liu, Akitsu Shigetou, Katsuaki Suganuma   +4 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Tuning Local Modulus at Liquid Metal‐Polymer Interfaces Regulates Electrocaloric Effect in Ferroelectric Nanocomposites

Advanced Electronic Materials, EarlyView.
Liquid metal nanoparticles create mechanically compliant polymer interfaces that facilitate reversible dipolar reorientation under electric fields, whereas rigid interfaces impose stronger local constraints. This soft–rigid interface comparison reveals local interfacial modulus as a key parameter for tuning electrocaloric entropy change in ...
Tian Yao, Shanyu Zheng, Binzhou Sun, Zhenhua Ma, Feiyu Zhang, Lu Yu, Qiang Li, Ruhong Luo, Feihong Du, Yifan Zhao, Yezhan Lin, Chunyu Wang, Xin Chen, Shi‐Yang Tang, Tiannan Yang, Xiaoshi Qian   +15 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe2

Advanced Electronic Materials, EarlyView.
Quantum dots are nanoscale islands that trap single electrons. In an atomically thin trilayer MoSe2 device, metallic finger gates sculpt the electronic landscape: tuning a single gate voltage smoothly merges two coupled quantum dots into one, and back.
Seungwoo Lee, Minjun Park, Yunsang Noh, Sung Jin An, Soyun Kim, Minseo Cho, Dohun Kim, Takashi Taniguchi, Kenji Watanabe, Minkyung Jung, Youngwook Kim   +10 more
wiley   +1 more source