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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
Nature, 2001X. Duan+4 more
semanticscholar +1 more source
1999
Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this ...
openaire +2 more sources
Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this ...
openaire +2 more sources
Ru-doped 3D flower-like bimetallic phosphide with a climbing effect on overall water splitting
, 2020Ding Chen+10 more
semanticscholar +1 more source