A new p-n structure ultraviolet photodetector with p(-)-GaN active region
A new ultraviolet photodetector of employing p menus type GaN (p(-)-GaN) as the active layer is proposed. It is easy to obtain the p(-)-GaN layer with low carrier concentration.
Zhao DG (Zhao De-Gang) +2 more
core
Scalable Fabrication of Black Phosphorous Films for Infrared Photodetector Arrays
Bulk black phosphorous (bP) exhibits excellent infrared (IR) optoelectronic properties, but most reported bP IR photodetectors are fabricated from single exfoliated flakes with lateral sizes of
Zhong, YL +9 more
core +1 more source
SrTiO3 thin film photothermoelectric photodetector in long-wavelength infrared region
Reduced SrTiO3 (r-STO) with large Seebeck coefficient is promising for high-performance photothermoelectric (PTE) photodetector. However the response time of bulk r-STO photodetector is on second scale.
Jiang PENG;
State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Yi HUANG; State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Yi JIN; Department of Optoelectronic Information Engineering, Zhejiang University, Xiyuan CAO; State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Xiaowei LU; State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Aimin WU;
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of +5 more
core
Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang +5 more
wiley +1 more source
A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices ...
Javaid, Kashif +9 more
core
Neuromorphic Devices and Computing for Sensing, Memory, and Control
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu +2 more
wiley +1 more source
— The detection of blue light hazard for artificial illuminants has become a challenging issue. In this work, a self-powered narrowband photodetector based on lead-free perovskite Cs2AgBiBr6 for low-toxicity blue light hazard detection has been reported.
An, Xiang +10 more
core +1 more source
MetaboSense is a first‐of‐its‐kind microfluidic platform enabling continuous, in‐line monitoring of glucose and lactate during ex vivo lung perfusion. Combining a quantum dot–mediated aptamer assay with mixing, depletion, and optofluidic detection modules, it achieves 60–s temporal resolution and shows strong agreement with standard blood gas analyzers,
Sanjana Srikant +14 more
wiley +1 more source
Efficient conversion and detection of short‐wave infrared (SWIR) photons are becoming increasingly important for emerging photonic and energy technologies. Here, we report an organic photothermoelectric device based on an open‐shell conjugated polymer that enables SWIR energy conversion and photon detection via the photothermoelectric effect.
Guan‐Lin Chen +5 more
wiley +1 more source
An NbS3/WSe2 van der Waals heterostructure realizes a continuously gate‐tunable self‐powered photovoltaic response through interfacial band‐alignment modulation and reversible built‐in electric‐field switching. The short‐circuit photocurrent scales linearly with incident power density, while short‐circuit photoresponsivity varies linearly with gate ...
Jidong Liu +9 more
wiley +1 more source

