Results 171 to 180 of about 17,314 (264)

Local Order Is Not Enough: Synthetically Accessible Polymers Reveal the Role of Side‐chain Branching Point in Organic Solar Cell and Transistor Performance

open access: yesAdvanced Electronic Materials, EarlyView.
Systematic variation of the side‐chain branching point in a series of donor polymers reveals that moving the branch further from the backbone improves local crystal quality but reduces the overall degree of crystallinity, leading to progressively worse organic solar cell and transistor performance.
Martina Rimmele   +8 more
wiley   +1 more source

Eco‐Friendly Laser‐Induced Graphene/Perovskite Hybrids for Eco‐Friendly Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
A sustainable paper‐based photodetector was developed by combining laser‐induced graphene (LIG) with MAPbI3 perovskite. Compared with pure LIG devices, the hybrid photodetector exhibited nearly 10‐fold higher responsivity and 7‐fold greater detectivity while maintaining stable performance after 1000 bending cycles, demonstrating its potential for ...
Ya‐Yun Huang   +3 more
wiley   +1 more source

High‐Responsivity and Fast‐Response Organic Phototransistor Based on Dinaphtho[2,3‐b:2′,3′‐f]Thieno[3,2‐b]Thiophene

open access: yesAdvanced Electronic Materials, EarlyView.
Low‐temperature Al/Al2O3/DNTT/Au organic phototransistors fabricated on flexible PEN combine high responsivity to blue light (≈250 A W−1 at 39 nW cm−2) with detectable modulated photoresponse up to 150 kHz, making them promising for ultra‐low‐light sensing and moderate‐speed optical links.
Antonio Caldarelli   +7 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

Proton Irradiation Tolerance of Fully Printed Self‐Powered Carbon‐Electrode Perovskite Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
Proton irradiation effects on fully printed carbon‐electrode perovskite photodiodes are systematically examined. Devices exposed to 0.5 MeV protons retain structural integrity while exhibiting defect‐induced changes in local coordination and recombination dynamics.
Almaz R. Beisenbayev   +8 more
wiley   +1 more source

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