Results 181 to 190 of about 34,337 (296)

Systematic Phosphorus‐Driven Structural and Field Engineering of n‐a‐Si:H for Flexible n‐a‐Si:H/Te Near‐Infrared Photodetectors

open access: yesAdvanced Science, EarlyView.
Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Kyeong‐jin Hyun   +7 more
wiley   +1 more source

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

open access: yesAdvanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu   +9 more
wiley   +1 more source

Recent Advances in Metal Phthalocyanine for Sensing Applications. [PDF]

open access: yesNanomaterials (Basel)
Wu H   +4 more
europepmc   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami   +7 more
wiley   +1 more source

Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing

open access: yesAdvanced Electronic Materials, EarlyView.
This work shows the inkjet printing of semi‐transparent and opaque organic photodiodes that enable light detection in the near‐infrared regime. Their transparency and high detection speed make them ideal for applications in soft robotics, wearable devices, and light communication systems.
Luis Arturo Ruiz‐Preciado   +3 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo   +11 more
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos   +4 more
wiley   +1 more source

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