Results 181 to 190 of about 81,856 (309)

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

open access: yesAdvanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad   +4 more
wiley   +1 more source

Short-pulsed proton irradiation stability in slot-die-coated bifacial perovskite photodetectors. [PDF]

open access: yesSci Rep
Parkhomenko HP   +6 more
europepmc   +1 more source

Stability of PEA2PbBr4 Thin‐Film Photodetectors under Thermal and Moisture Stress

open access: yesAdvanced Electronic Materials, EarlyView.
This study investigates the environmental durability of 2D perovskite photodetectors under extreme heat and humidity. While pristine films degrade in harsh environmental conditions, adding a halogen‐bonding agent significantly improves stability. This passivated device maintains stable performance in conditions mimicking space and solar applications ...
Sara Cepić   +3 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş   +6 more
wiley   +1 more source

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