Results 171 to 180 of about 610,554 (242)
A Highly Sensitive Graphene-Based Terahertz Perfect Absorber Featuring Five Tunable Absorption Peaks. [PDF]
Ma H, Shi P, Yi Z.
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Utilizing the 2D confined space of layered double hydroxide (LDH), living supramolecular assembly (LSA) are successfully prepared with smaller intermolecular distances than in crystals. The IEF enhancement value can reach 11.8 times, which induces a charge separation efficiency of 71.52%.
Xiaoqing Cao+4 more
wiley +1 more source
Organic-inorganic hybrid covalent superlattice for temperature-compensated ratiometric gas sensing. [PDF]
Li KF+6 more
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This work successfully synthesized novel 0D Mn2⁺‐based metal halides (MHs) PTA2MnBr4 and DMA2MnBr4 wafers by a precise molecular design the distance between Mn atoms. The larger PTA⁺ benzene ring structure reduces energy transfer. Importantly, the X‐ray detector based on PTA2MnBr4 wafers achieved the high sensitivity of 1122 µC Gyair−1 cm−2, an low LoD
Feifei Chai+8 more
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Enhancing Radiation Shielding Efficiency of <i>Nigella sativa</i> Eumelanin Polymer Through Heavy Metals Doping. [PDF]
Marashdeh M, Madkhali N.
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Hygroscopic hydrogels are capable of utilizing the moisture from air, which can transfer the gaseous water to liquid by a surface phase transition. Taking advantage of this water, sustainable water production, thermal management, and electricity generation can be realized.
Yujie Du+5 more
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Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films. [PDF]
Mei H+9 more
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2‐thiophenemethylammonium (ThMA+) spacer cation‐based quasi‐2D (ThMA)2(MA)n‐1PbnI3n+1 (n = 4) photoelectric field‐effect transistors are developed, and its optoelectronic performance and neuromorphic computing are explored. Abstract Optoelectronic modulated transistors based on organic–inorganic halide perovskites can perceive and parse visual ...
Wenwen Wang+6 more
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Reconfigurable terahertz optoelectronic logic through charge-density-wave phase engineering. [PDF]
Sun X+16 more
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This paper presents a self‐aligned heterojunction gate phototransistor that eliminates the need for high‐precision alignment tools. The device achieves a high responsivity of 2.9 × 105 A W−1 and a specific detectivity of 9.6 × 1013 Jones, comparable to the performance of non‐self‐aligned devices requiring complex fabrication.
Jingjing Ge+9 more
wiley +1 more source