Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection
Substitutional doping with lanthanide elements under charge balance conditions can effectively tune the bandgap of gallium oxide and has the potential to achieve a low background current in ultraviolet detection. Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ...
Shunze Huang+6 more
wiley +1 more source
Ultrasensitive photoelectric detection with room temperature extremum. [PDF]
Wu T+8 more
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Photoelectric Effect at Sub-Photon Energy in Incident Pulsed Laser Radiation
В. И. Ковалев
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Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study
This study demonstrates a straightforward laser irradiation method for inducing phase transitions in 2H‐MoTe₂. By optimizing laser parameters, multilayer 2H‐MoTe₂ encapsulated with h‐BN is successfully transformed into the single 1T' phase, confirmed by Raman spectroscopy.
Hao Chang+6 more
wiley +1 more source
Material analysis through X-ray attenuation decomposition in spectral computed tomography. [PDF]
Schilham A+3 more
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CH3O‐PEABr Passivated Quasi‐2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light‐Emitting Diodes
Green quasi‐2D perovskite LEDs based on CH3O‐PEABr modified BA2Cs4Pb5Br16 films achieve a peak EQE of 19.47%. The suppressed defect density enables high‐performance electroluminescence, offering a scalable strategy for efficient and durable electroluminescent devices.
Yuxin Liu+5 more
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A Review of <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> Films: Fabrications and Photoelectric Properties. [PDF]
Wang S+10 more
europepmc +1 more source
This study developed a neuroevolution machine learning potential of both a‐Si:H and a‐Si systems, and revealed that the softening of vibrational modes and enhanced anharmonicity contribute to the reduction in thermal conductivity with increasing temperature and hydrogen concentration.
Zhuo Chen+8 more
wiley +1 more source
Research Progress and Future Perspectives on Photonic and Optoelectronic Devices Based on p-Type Boron-Doped Diamond/n-Type Titanium Dioxide Heterojunctions: A Mini Review. [PDF]
Ge S+5 more
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