Results 241 to 250 of about 71,116 (338)

Self‐Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection

open access: yesAdvanced Electronic Materials, EarlyView.
This paper presents a self‐aligned heterojunction gate phototransistor that eliminates the need for high‐precision alignment tools. The device achieves a high responsivity of 2.9 × 105 A W−1 and a specific detectivity of 9.6 × 1013 Jones, comparable to the performance of non‐self‐aligned devices requiring complex fabrication.
Jingjing Ge   +9 more
wiley   +1 more source

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films. [PDF]

open access: yesNanomaterials (Basel)
Mei H   +9 more
europepmc   +1 more source

Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection

open access: yesAdvanced Electronic Materials, EarlyView.
Substitutional doping with lanthanide elements under charge balance conditions can effectively tune the bandgap of gallium oxide and has the potential to achieve a low background current in ultraviolet detection. Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ...
Shunze Huang   +6 more
wiley   +1 more source

Controllable Laser‐Induced Phase Transition in Multilayer 2H‐MoTe2 and its Raman Spectroscopy Study

open access: yesAdvanced Electronic Materials, EarlyView.
This study demonstrates a straightforward laser irradiation method for inducing phase transitions in 2H‐MoTe₂. By optimizing laser parameters, multilayer 2H‐MoTe₂ encapsulated with h‐BN is successfully transformed into the single 1T' phase, confirmed by Raman spectroscopy.
Hao Chang   +6 more
wiley   +1 more source

CH3O‐PEABr Passivated Quasi‐2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
Green quasi‐2D perovskite LEDs based on CH3O‐PEABr modified BA2Cs4Pb5Br16 films achieve a peak EQE of 19.47%. The suppressed defect density enables high‐performance electroluminescence, offering a scalable strategy for efficient and durable electroluminescent devices.
Yuxin Liu   +5 more
wiley   +1 more source

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