Results 331 to 340 of about 89,422 (373)

Photolithography of polytetrafluoroethylene for adhesion [PDF]

Journal of Applied Polymer Science, 1989
AbstractIrradiation of polytetrafluoroethylene (PTFE) with Mg(Kα) X‐rays is shown to protect the surface against the chemical etching steps used to prepare PTFE for adhesion. Preirradiated etched samples of PTFE have adhesion strengths to epoxies of less than 3% of that for nonirradiated etched samples.
R. J. Martinez, R. R. Rye
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Photolithography–enabled direct patterning of liquid metals

, 2020
One of the major challenges in the development of soft electronics is to devise scalable and automated strategies for the microfabrication of deformable and flexible electronic components and sensors.
R. Abbasi, M. Mayyas, M. Ghasemian, Franco Centurion, Jiong Yang, Maricruz G. Saborio, Francois‐Marie Allioux, Jialuo Han, Jianbo Tang, Michael J. Christoe, K. Mohibul Kabir, K. Kalantar-zadeh, Md. Arifur Rahim   +12 more
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Reduction Photolithography Using Microlens Arrays:  Applications in Gray Scale Photolithography

Analytical Chemistry, 2002
This paper describes the application of reduction photolithography, using arrays of microlenses and gray scale masks, to generate arrays of micropatterns having multilevel and curved features in photoresist. This technique can fabricate, in a single exposure, three-dimensional microstructures (e.g., nonspherical microlens arrays) over areas of ...
George M. Whitesides, Teri W. Odom, Hongkai Wu   +2 more
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Cell-Imprint Surface Modification by Contact Photolithography-Based Approaches: Direct-Cell Photolithography and Optical Soft Lithography Using PDMS Cell Imprints.

ACS Applied Materials and Interfaces, 2019
New cell-imprint surface modification techniques based on direct-cell photolithography and optical soft lithography using poly(dimethylsiloxane) (PDMS) cell imprints are presented for enhanced cell-based studies. The core concept of engineering materials
Hanie Kavand, H. van Lintel, Soroush Bakhshi Sichani, S. Bonakdar, Hamed Kavand, J. Koohsorkhi, P. Renaud   +6 more
semanticscholar   +1 more source

Deep-UV Photolithography

Japanese Journal of Applied Physics, 1978
Methacrylates PMMA, P(MMA-MA)and FBM can be satisfactorily used as photoresist. FBM has the sensitivity 7 times higher than the PMMA standard developing system. PGMA and P(GMA-EA) have the positive working behaviors. The chrome-on-quartz substrate mask is suitable as a photomask.
Kyozo Sekikawa, Yoshiaki Mimura, Takashi Ohkubo, Takeuchi Tatsuo   +3 more
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Photolithography illumination needs

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1985
Abstract Industrial photolithographic exposures are now performed almost entirely with the high pressure mercury arc, using one or more of the spectral lines at 365, 408 and 436 nm. It would be difficult for the free electron laser to replace the entrenched and reliable arc unless it could offer a significant improvement, for instance, in brightness.
Janusz S. Wilczynski, Douglas S. Goodman
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Maskless photolithography

2014
: The virtues of using photons for maskless lithography rather than charged particles are discussed briefly. Two generic forms of maskless photolithography, image projection and focal-spot writing, are compared. A particular form of focal-spot writing, zone-plate-array lithography (ZPAL), is highlighted.
M.E. Walsh, F. Zhang, R. Menon, H.I. Smith   +3 more
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Photolithography at 193 nm [PDF]

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
Photolithography at 193 nm is a natural continuation of the progression from 436 to 365 to 248 nm in lithography, dictated by the requirement for continually higher resolution. It is anticipated that 193-nm lithography will enable 0.25-μm patterning in volume production with conventional masks, and 0.18-μm resolution with phase-shifting masks. The main
Mordechai Rothschild, Jan H. C. Sedlacek, Russell B. Goodman, Roderick R. Kunz, Mark W. Horn, Mark A. Hartney, D. C. Shaver   +6 more
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Align-and-shine photolithography

SPIE Proceedings, 2009
At the beginning of 2009, our group has introduced a new technique that allows fabrication of photolithographic patterns on the cleaved end of an optical fibre: the align-and-shine photolithography technique (see A. Petrusis et al., "The align-and-shine technique for series production of photolithography patterns on optical fibres", J.
Davide Iannuzzi, Audrius Petrusis, Sven de Man, Kristen Smith, J.H. Rector   +4 more
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Interference photolithography with metamaterials

2008 IEEE PhotonicsGlobal@Singapore, 2008
We present that a sub-diffraction-limited photolithography technique can be theoretically achieved by affiliating an anisotropic metamaterial under the conventional photolithographic mask. Based on the special dispersion characteristics of the metamaterial, only the enhanced evanescent waves with high spatial frequencies can transmit through the ...
Changtao Wang, Ting Xu, Xiangang Luo
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