Results 171 to 180 of about 240,081 (351)
Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants [PDF]
, 1991 A. Pérez-Rodrı́guez +5 more
openalex +1 more source
Advanced Materials, EarlyView.A rapid surface reconstruction strategy is proposed to enhance the charge collection efficiency and stability of indium sulfide (In2S3) photoanode via a high‐temperature flame treatment. This method selectively transforms the In2S3 surface into a diffusionless In2O3 and generates bulk sulfur vacancies, resulting in surface‐reconstructed In2S3 (sr‐In2S3)
Yoo Jae Jeong +8 more
wiley +1 more source
Photoluminescence of platinum complex [PtII(4,7-diphenyl-1,10-phenanthroline)(CN)2] in solution [PDF]
, 1990 Horst Kunkely, Arnd Vogler
openalex +1 more source
Perovskite Light‐Emitting Diodes with Quantum Wires and Nanorods
Advanced Materials, EarlyView.This review focuses on low‐dimensional perovskite materials and discusses their applications in light‐emitting diodes (LEDs). Special attention is given to the introduction of perovskite quantum wires and nanorods, two unique types of one‐dimensional (1D) materials, and their interesting optoelectronic properties.
Qianpeng Zhang +11 more
wiley +1 more source
Photoluminescence Features of Few-Layer Hexagonal $α$-In$_2$Se$_3$ [PDF]
arXivIndium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer In$_2$Se$_3$ flakes with thicknesses ranging from 7 to 100 monolayers.
arxiv
Photoluminescence of tellurium(IV) chloride complexes in solution [PDF]
, 1993 Hans Nikol, Arnd Vogler
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Synthetic Control of Water‐Stable Hybrid Perovskitoid Semiconductors
Advanced Materials, EarlyView.Hybrid metal‐halide perovskites are promising semiconductors for optoelectronics, yet their water stability is problematic. A new synthesis method is developed using lead iodide and cysteamine under various pH conditions, forming stable perovskitoid structures.
Jiyoon Kim +8 more
wiley +1 more source
Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties [PDF]
, 1990 C. Deparis, J. Massies, G. Neu
openalex +1 more source
Advanced Materials, EarlyView.As defect density in 3D perovskites is controlled by adjusting excess formamidinium iodide concentration, shallow defects acts as a carrier sink for amplified spontaneous emission (ASE). A comprehensive charge carrier dynamic model is presented to understand the critical factor of the reduction of ASE threshold.
Chun‐Sheng Jack Wu +4 more
wiley +1 more source