Results 201 to 210 of about 124,796 (262)
A grain‐boundary‐enriched NiFe cocatalyst is coupled with a CuSCN hole transport layer on BiVO4 photoanodes. The integrated architecture promotes hole extraction, interfacial charge transfer, and surface OER kinetics, highlighting cocatalyst microstructure regulation as a complementary strategy to hole transport layer engineering. ABSTRACT Solar‐driven
Wei Zhao +8 more
wiley +1 more source
Bioinspired Metastable Transient Peeling for Repeatable Rapid Release
Inspired by the explosive seed ejection of the squirting cucumber, this work introduces metastable transient peeling that temporally regulates stored interfacial energy release via a tunable energy barrier. A viscoelastic hemispherical gripper achieves 52 ms ultrafast, residue‐free release with 300 000‐cycle durability, enabling damage‐free handling of
Lvzhou Li +8 more
wiley +1 more source
PSCs are afflicted by inherent defects and lattice strain that limit PCE and stability. A cross‐linked multifunctional ionogel [HA‐AA][EMIES] is developed to modulate crystallization, relieve residual strain, and passivate defects, extending carrier diffusion length to over 8 µm and delivering PCEs of 26.45% for rigid devices and 25.14% for flexible ...
Wen Wu +12 more
wiley +1 more source
Pressure treatment activates and retains bright blue emission in melamine (MA). The pressure‐modified hydrogen‐bonding network and molecular packing create a distinct local environment after decompression, changing the balance among competing excited‐state relaxation pathways and enabling retained emission.
Siyao Wang +8 more
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Quantum mechanics theory about photoluminescence is first introduced then applied to various case studies to understand the microscopic processes, namely photon excitation, energy relaxation and radiative recombination, involved in the photoluminescence ...
Wei Lu, Ying Fu
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On photoluminescence in HgGa2S4
Journal of Luminescence, 2005Abstract In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa2S4 which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place ...
RICCI, PIER CARLO +2 more
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Photoluminescence and photoluminescence excitation study of CuGaTe2
Journal of Applied Physics, 1998Photoluminescence (PL) and photoluminescence excitation measurements over a temperature range 12 K<T<300 K on high quality CuGaTe2 crystals grown by the vertical Bridgman method were completed. The whole PL spectrum consists of two regions.
J. Krustok +7 more
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Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As
Journal of Applied Physics, 1993A detailed study of the photoluminescence (PL) and photoluminescence excitation (PLE) properties of Al0.48In0.52As is presented. A PL linewidth of 13 meV and a Stokes shift of only 9 meV at 4.2 K both indicate that the effect of clustering is minimal in our samples. The Stokes shift is three times lower than the lowest reported in the literature.
S. M. Olsthoorn +3 more
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The photoluminescence of SrS:Cu nanophosphor
Nanotechnology, 2008Strontium sulfide doped with copper has been regarded as one of the most promising inorganic materials for the blue-green color phosphor. A wet chemical precipitation method with post-annealing is presented for the synthesis of copper-doped SrS nanoparticles. XRD studies revealed the phase purity of SrS particles with rocksalt structure.
E I, Anila, Arun, Aravind, M K, Jayaraj
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Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
Solid State Communications, 1986ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K.
S. Zemon +4 more
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