Results 31 to 40 of about 36,305 (258)

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

INFLUENCE OF THE THIN LAYERS THICKNESS, DEPOSITED BY PVD METHOD ON DURABILITY OF THE CUTTING INSERTS

open access: yesNonconventional Technologies Review, 2015
Deposition of some materials as thin layers on cutting tools, to increase the wear resistance of these, has become a major interest for the cutting tool industry in recent years.
Ana Badanac   +4 more
doaj  

Nanostructured Thin Films: Properties, Fabrication and Applications—A Short Review

open access: yesNanomaterials
Nanostructured thin films are emerging into a diversified class of materials with unique optical, chemical, and physical capabilities as a result of their nanoscale characteristics.
Ana-Maria Florea (Raduta)   +4 more
doaj   +1 more source

The influence of ageing on the morphological and optical properties of thin TPD films [PDF]

open access: yesHemijska Industrija, 2011
This paper presents the influence of ageing on the morphological and optical properties of TPD (N, N’ - Bis (3 - methylphenil) - N, N’ diphenylbenzidine) thin films. Understanding of the nucleation mechanism and growth dynamics of molecular thin films
Trifunović Saša B.   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Characterization of oxide barrier layers prepared by atomic layer deposition

open access: yesAdvances in Mechanical Engineering, 2017
Atomic layer deposition has become an important thin-film growth technique for producing gas diffusion barriers because of its low process temperature and its ability to produce uniform films.
Fa-Ta Tsai   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Luminescence and Structure of ZnO Grown by Physical Vapor Deposition

open access: yesAdvances in Materials Science and Engineering, 2012
Nanostructured ZnO was deposited on different substrates (Si, SiO2, and Au/SiO2) by an enhanced physical vapor deposition technique that presents excellent luminescent properties.
R. García-Gutiérrez   +4 more
doaj   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Home - About - Disclaimer - Privacy