Results 71 to 80 of about 151,983 (299)

Unlocking Photodetection Mode Switching from a Simple Lateral Design

Advanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong, Keng‐Te Lin, Joel van Embden, Taimur Ahmed, Yumeng Du, Dashen Dong, Yiwen Mai, Junlin Lu, Sumeet Walia, Baohua Jia, Tianyi Ma   +10 more
wiley   +1 more source

Theoretical analysis of dynamic property for piezoelectric cantilever triple-layer benders with large piezoelectric and electromechanical coupling coefficients [PDF]

Journal of Advanced Dielectrics, 2016
Ferroelectric single crystals, such as PZN-PT, provide novel prospects in piezoelectric bending devices such as actuators, sensors or energy harvesters because of their extraordinarily large piezoelectric coefficients.
Li Jiao Gong, Cheng Liang Pan, Qiao Sheng Pan, Zhi Hua Feng   +3 more
doaj   +1 more source

Tracing Sub‐Monolayer Contamination on Wafer‐Scale 2D Materials

Advanced Functional Materials, EarlyView.
Sub‐monolayer adventitious carbon contamination limits the performance and reproducibility of 2D material‐based devices. This study demonstrates scanning helium microscopy (SHeM) as a non‐destructive, ultra‐sensitive tool for wafer‐scale imaging of surface cleanliness.
Chenyang Zhao, Sam M. Lambrick, Ke Wang, Shaoliang Guan, Aleksandar Radić, David J. Ward, Andrew P. Jardine, Boyao Liu   +7 more
wiley   +1 more source

Passive Damping of Longitudinal Vibrations of a Beam in the Vicinity of Natural Frequencies Using the Piezoelectric Effect

Axioms, 2023
To significantly reduce the amplitude of longitudinal vibrations of the beam in the vicinity of its natural frequencies, a fundamentally new method of damping vibrations is used.
Nelly Rogacheva, Vladimir Sidorov, Yulia Zheglova   +2 more
doaj   +1 more source

POSFET tactile sensing arrays using CMOS technology [PDF]

, 2012
This work presents fabrication and evaluation of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip.
Adami, Andrea, Collini, Cristian, Dahiya, Ravinder S., Lorenzelli, Leandro   +3 more
core   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

Numerical Analysis of Piezoelectric Active Repair in the Presence of Frictional Contact Conditions

Sensors, 2013
The increasing development of smart materials, such as piezoelectric and shape memory alloys, has opened new opportunities for improving repair techniques. Particularly, active repairs, based on the converse piezoelectric effect, can increase the life of
Antonio Messineo, Calogero Orlando, Alberto Milazzo, Andrea Alaimo   +3 more
doaj   +1 more source

PVDF Based Static Charge Induced Flexoelectric Microphone

Advanced Electronic Materials, 2023
Polyvinylidenedifluoride (PVDF)‐based microphones are either categorized as piezoelectric (PE) microphones or flexoelectric (FE)‐induced PE microphones. Based on the production of electrostatic charge and higher sensitivity, here, a static charge induced
Mudassar Shehzad, Han Pan, Shuhao Wang, Yaojin Wang   +3 more
doaj   +1 more source

Low temperature-semiconductor band gap thermal shifts: T^4 shifts from ordinary acoustic and T^2 from piezoacoustic coupling

, 2017
At low temperature T, the experimental gap of silicon decreases as E_g(T)=E_g(0)-AT^4. The main reason is electron-phonon renormalization. The physics behind the T^4-power law is more complex than has been realized.
Allen, Philip B., Nery, Jean Paul
core   +1 more source

Optoelectrical Devices for Neural Interfacing: Engineering Integration, Stability, and Multimodal Sensing

Advanced Healthcare Materials, EarlyView.
Implantable optoelectrical devices are an effective resource for the modulation and monitoring of neural activity with high spatiotemporal resolution. This review discusses current challenges faced by these devices and outlines future perspectives for the development of next‐generation neural interfaces targeting chronic, multisite, and multimodal ...
Stella Aslanoglou, Barbara Spagnolo, Antonio Balena, Massimo De Vittorio, Ferruccio Pisanello   +4 more
wiley   +1 more source