Results 171 to 180 of about 158,501 (299)

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

open access: yesAdvanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli   +13 more
wiley   +1 more source

Spheroid‐On‐A‐Drop: A Modular Droplet Microfluidics Platform

open access: yesAdvanced Materials Technologies, EarlyView.
The proposed Spheroid‐on‐a‐Drop platform represents a reproducible and tunable platform for the fabrication of biocompatible GelMA‐based microgels, able to support controlled 3D tumor spheroid culture. Its precise control over droplet dynamics and cell distribution paves the way for advanced applications in tissue modeling, drug screening, and ...
A. Fergola   +8 more
wiley   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

Defect‐Engineered ZnO Nanowire Arrays for Flexible Room‐Temperature Hydrogen Sensors

open access: yesAdvanced Materials Technologies, EarlyView.
Fabrication process of patterned ZnO nucleation sites on a flexible polyimide (PI) substrate. Top/tilted‐view SEM images of ordered ZnO nanoflower arrays confined within patterned circular regions. AFM topography map with height data revealing a disk‐array structure, where the patterned regions (marked by a red dot circle) are elevated by ∼2 µm ...
Jun‐Ting Wang   +7 more
wiley   +1 more source

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