Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs [PDF]
Volker Ziegler +7 more
openalex +1 more source
Characterization of a Commercial PIN Diode for Stereotactic Radiosurgery Dosimetry
Matheus Fernando dos Santos +9 more
openalex +2 more sources
Flexible Memory: Progress, Challenges, and Opportunities
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Treatments of unesthetic amalgam tattoo: A literature review and a case report
Abstract Background An amalgam tattoo is an iatrogenic lesion that can lead to esthetic concerns. This paper presents a literature review aimed at exploring treatment options available to clinicians for addressing this unesthetic issue. Methods The initial search identified 209 potentially relevant publications.
Lucrezia Parma‐Benfenati +3 more
wiley +1 more source
Polarization-diversity backscatter communication based on programmable information metasurface. [PDF]
Luo G +6 more
europepmc +1 more source
3D‐Printed Coil Immobilized Enzyme Reactors for Laccase Biocatalysis in Single‐ and Two‐Phase Flow
Development of 3D‐printed immobilized enzyme reactors functionalized with laccase for continuous‐flow biocatalysis. Surface coupling and reactor design enhanced stability and mass transfer, enabling efficient and reusable biocatalytic processes.
Alina J. Tauriainen +4 more
wiley +1 more source
Electronically switchable dual-band capsule antenna for wireless endoscopic applications. [PDF]
Gogosh N +5 more
europepmc +1 more source
Ultra Sensitive PIN-Diode Receiver Utilizing Photocurrent Integration on a Parasitic Capacitance
Christoph Gasser +3 more
openalex +1 more source
WITHDRAWN: Impact of Dark Current on Pinned Photo-Diode Capacitance of CMOS Image Sensor in Low illumination Regime [PDF]
Mohsin Suharwerdi, Gausia Qazi
openalex +1 more source
Des diodes PiN 6500V en SiC ont été réalisées chez IBS. Huit étapes de photolithographie sont nécessaires pour la fabrication de tels composants. La protection périphérique est de type Mesa-JTE. La tenue en tension maximale obtenue est de 6 000V indépendamment des surfaces (2, 8 et 24 mm2). Les courants de fuite sont inférieurs à 10 μA.
Brosselard, Pierre +7 more
openaire +1 more source

