Results 261 to 270 of about 63,086 (289)

PIN-diodes for electron detection

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
Abstract The counting and spectroscopy of conversion electrons and β-rays was tested with PIN-diodes. The diodes were used in air at normal pressure and at different operational temperatures. The energy resolution and low-energy detection thresholds as well as the time resolution for coincidence counting were measured.
W.-D. Schmidt-Ott, U. Bosch, Th. Möhlenkamp   +2 more
openaire   +1 more source

Broadband microwave PIN diode attenuators

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 2002
The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate.
S. Iordanescu, G. Simion, C. Anton, A. Muller   +3 more
openaire   +1 more source

AlGaAs anode heterojunction PIN diodes

physica status solidi c, 2013
AbstractThis paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity ...
T. Boles, J. Brogle, D. Hoag, D. Carlson
openaire   +1 more source

Avalanche breakdown in read diodes and pin diodes

Solid-State Electronics, 1968
Abstract The avalanche breakdown voltages, VB, for Ge and Si Read (p+nin+ or n+pip+) and pin diodes have been evaluated numerically. For the idealized Read diode the static characteristics of the avalanche region, namely the breakdown field, the width of the avalanche region and the voltage drop, VA, across the avalanche region have also been ...
G. Gibbons, S.M. Sze
openaire   +1 more source

Optically activated pin diode switch

IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 2003
The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon ...
A. Rosen, P. Srabile, W. Janton, A. Gombar, J. McShea, R.A. Buckingham, A. Rosenberg, P. Herczfeld, A. Bahasadri   +8 more
openaire   +1 more source

Numerical Modelling of PIN Diodes

IMA Journal of Numerical Analysis, 1984
Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
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High Power Pin Diode Limiting

1967 G-MTT International Microwave Symposium Digest, 1967
Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
openaire   +1 more source

Microstrip PIN diode microwave switch

Radioelectronics and Communications Systems, 2011
A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.
Usanov, Dmitry A., Skripal, A. V., Kulikov, M. Yu.   +2 more
openaire   +2 more sources

High speed high voltage PIN diode driver

IEEE International Symposium on Industrial Electronics. Proceedings. ISIE'98 (Cat. No.98TH8357), 2002
A driver circuit for an RF PIN diode switch is described, the circuit features an efficient means of removing stored charge from the PIN diode, ensuring rapid switching between the forward and reverse biased states and low current consumption from the HV supply.
van Niekerk C., van der Walt P.W.
openaire   +1 more source

Noise characterization of a-Si:H pin diodes

Journal of Non-Crystalline Solids, 2006
Abstract Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130 nm) and front contact material (SnO2 and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and ...
Jankovec, M., Stiebig, Helmut, Smole, F., Topic, M.   +3 more
openaire   +1 more source