Results 31 to 40 of about 309,670 (287)

Iron loss evaluation of magnetic materials excited by a SiC inverter with a Schottky barrier diode wall-integrated trench MOSFET

open access: yesAIP Advances, 2020
This study examines the impact of the different diode characteristics on the magnetic hysteretic and iron loss properties of a conventional non-oriented (NO) silicon steel sheet core under silicon carbide (SiC) inverter excitation.
Atsushi Yao   +5 more
doaj   +1 more source

Effect Of A Discrete PIN Diode On Defected Ground Structure [PDF]

open access: yes, 2013
Email Print Request Permissions Save to Project This paper investigates the effect of a discrete PIN diode on Defected Ground Structure (DGS) where the different resonant frequency between ON and OFF state of the PIN diode is observed ...
Shairi, Noor Azwan   +3 more
core   +2 more sources

The Linear Fitting Method for Model of PIN Array Receiver in Space Optical Communication

open access: yesInternational Journal of Optics, 2022
We have proposed PIN array as receiver in space optical communication and adopted the double diode model, the widely accepted solar energy output theory, to study its characteristics of output current and voltage.
H. Qinggui
doaj   +1 more source

Design of Pin Diode Detector [PDF]

open access: yes, 2001
A good light detector is when it could convert all the photon to the electrical signal in high speed. The junction photodetector is the most common photodetection device.
Md Yunus, Nurul Amziah
core   +1 more source

Passive parasitic UWB antenna capable of switched beam‐forming in the WLAN frequency band using an optimal reactance load algorithm

open access: yesETRI Journal, 2019
We propose a switched beam‐forming antenna that satisfies not only ultra‐wideband characteristics but also beam‐forming in the WLAN frequency band using an ultra‐wideband antenna and passive parasitic elements applying a broadband optimal reactance load ...
Jung‐Nam Lee   +3 more
doaj   +1 more source

Doping-Less SiC p-i-n Diode: Design and Investigation

open access: yesIEEE Access, 2021
We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of ...
Sara Hahmady, Stephen Bayne
doaj   +1 more source

A Codesigned Compact Dual-Band Filtering Antenna with PIN Loaded for WLAN Applications

open access: yesInternational Journal of Antennas and Propagation, 2014
A codesigned compact dual-band filtering antenna incorporating a PIN diode for 2.45/5.2 GHz wireless local area network (WLAN) applications is proposed in this paper.
Shanxiong Chen   +3 more
doaj   +1 more source

Design and Realization of an UHF Frequency Reconfigurable Antenna for Hybrid Connectivity LPWAN and LEO Satellite Networks

open access: yesSensors, 2021
UHF satellite communication for Internet of Things (IoT) technology is rapidly emerging in monitoring applications as it offers the possibility of lower-costs and global coverage.
Abdellatif Bouyedda   +2 more
doaj   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies   +2 more
wiley   +1 more source

Operating principles of pin diodes

open access: yesElectrical Engineering in Japan, 2007
AbstractAnalytical models of the pin diode in a small‐current operation are not known yet. This article presents a simple analytical model of the pin diode operation with its confirmation by a numerical simulation. At the onset, carrier recombinations are not included for the sake of simplicity. The exact JF−VF characteristic $[J_{F} \propto \hbox{exp}(
openaire   +2 more sources

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