Results 301 to 310 of about 43,625 (354)
Some of the next articles are maybe not open access.
Noise characterization of a-Si:H pin diodes
Journal of Non-Crystalline Solids, 2006Abstract Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130 nm) and front contact material (SnO2 and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and ...
Jankovec, M. +3 more
openaire +1 more source
Performance of a neutron spectrometer based on a PIN diode
Radiation Protection Dosimetry, 2005The neutron spectrometer discussed in this work consists of a PIN diode coupled with a polyethylene converter. Neutrons are detected through the energy deposited by recoil-protons in silicon. The maximum detectable energy is -6 MeV and is imposed by the thickness of the fully depleted layer (300 microm for the present device).
GIULINI CASTIGLIONI AGOSTEO, STEFANO LUIGI MARIA +6 more
openaire +4 more sources
Heterojunction PIN diode switch
IEEE MTT-S International Microwave Symposium Digest, 2003, 2003This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a replacement for the homojunction GaAs PIN diodes commonly used in microwave systems as a control element for commercial and military switch applications up through millimeter wave frequencies. In particular, a single heterojunction PIN diode, when simulated at a bias of
D. Hoag +4 more
openaire +1 more source
Avalanche breakdown in read diodes and pin diodes
Solid-State Electronics, 1968Abstract The avalanche breakdown voltages, VB, for Ge and Si Read (p+nin+ or n+pip+) and pin diodes have been evaluated numerically. For the idealized Read diode the static characteristics of the avalanche region, namely the breakdown field, the width of the avalanche region and the voltage drop, VA, across the avalanche region have also been ...
G. Gibbons, S.M. Sze
openaire +1 more source
PIN-diodes for electron detection
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989Abstract The counting and spectroscopy of conversion electrons and β-rays was tested with PIN-diodes. The diodes were used in air at normal pressure and at different operational temperatures. The energy resolution and low-energy detection thresholds as well as the time resolution for coincidence counting were measured.
W.-D. Schmidt-Ott +2 more
openaire +1 more source
Numerical Modelling of PIN Diodes
IMA Journal of Numerical Analysis, 1984Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
openaire +1 more source
1982
PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
openaire +1 more source
PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
openaire +1 more source
3rd European Microwave Conference, 1973, 1973
Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
openaire +1 more source
Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
openaire +1 more source
2010 Second Pacific-Asia Conference on Circuits, Communications and System, 2010
In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
openaire +1 more source
In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
openaire +1 more source
Frequency reconfigurable antenna using PIN diodes
2014 Twentieth National Conference on Communications (NCC), 2014A compact frequency reconfigurable double slot antenna for wireless communication is presented. The proposed antenna consists of double slot with six RF PIN diodes placed at different position on the ground plane to achieve frequency reconfigurability. Based on the switching state of the PIN diode the antenna is capable of operating at eleven different
R. Jothi Chitra, Velmurugan Nagarajan
openaire +1 more source