Results 311 to 320 of about 43,625 (354)

Physical Modelling of 4H-SiC PiN Diodes

Materials Science Forum, 2012
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter Michael Gammon, Pierre Brosselard, Philippe Godignon, Philip Andrew Mawby   +7 more
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PIN silicon diode fast neutron detector

Radiation Protection Dosimetry, 2005
Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu-Be neutron source was measured ...
Chunzhi, Zhou, Jianxing, Zhao, Wuyun, Xiao   +2 more
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Transient response of PIN limiter diodes

IEEE MTT-S International Microwave Symposium Digest, 2003
Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic
R.J. Tan, A.L. Ward, R. Kaul
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Silicon-on-Insulator Pin Diodes.

1987
Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu, Ted Letavic, Ronald J. Gutmann, Edward W. Maby   +3 more
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Recombination in the end regions of pin diodes

Solid-State Electronics, 1979
The recombination currents in the end regions of pin diodes have been investigated by means of an IR absorption technique. The diodes had graded doping profiles in the end regions, and a wide base (374 μm). It has been found experimentally that over a wide range of currents the recombination is proportional to the square of the injected carrier density
F. Berz, R.W. Cooper, S. Fagg
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Practical PIN Diodes

1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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High Power Pin Diode Limiting

1967 G-MTT International Microwave Symposium Digest, 1967
Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
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Prediction of PIN diode reverse recovery

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching ...
null Yueqing Wang, null Qingyou Zhang, null Jianping Ying, null Chaoqun Sun   +3 more
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A charge-control model of the pin diode

IEEE Transactions on Electron Devices, 1976
A charge-control model of the pin diode is developed which fully accounts for the additional contact-layer storage charges. This part of the storage charge is shown to greatly influence both the forward steady state and the turn-off transient (switching time and transition-loss).
K. Schunemann, J. Muller
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The Forward Characteristic of the Pin Diode

Bell System Technical Journal, 1956
A theory is given for the forward current-voltage characteristic of the PIN diffused junction silicon diode. The theory predicts that the device should obey a simple PN diode characteristic until the current density approaches 200 amp/cm2. At higher currents an additional potential drop occurs across the middle region proportional to the square root of
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