Results 321 to 330 of about 43,625 (354)

Optically activated pin diode switch

IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 2003
The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon ...
A. Rosen, P. Srabile, W. Janton, A. Gombar, J. McShea, R.A. Buckingham, A. Rosenberg, P. Herczfeld, A. Bahasadri   +8 more
openaire   +1 more source

Broadband microwave PIN diode attenuators

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 2002
The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate.
S. Iordanescu, G. Simion, C. Anton, A. Muller   +3 more
openaire   +1 more source

Reactance influence on PIN diode attenuators

International Journal of Electronics, 2006
The reactive component of a PIN diode is known to be a function of current due to conductivity modulation in the I-region. This reactive component can negatively influence predicted attenuation levels in PIN diode attenuators if not properly accounted for. A figure of merit based on the PIN diode parameters, DC forward current, and operation frequency,
Caverly, Robert H., Drozdovski, Nikolai V.   +1 more
openaire   +1 more source

PIN Diode Weight Circuits.

1979
Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
openaire   +1 more source

Pin Diode Single-Sideband Modulator

G-MTT 1970 International Microwave Symposium, 1970
A reflection-type single-sideband modulator is described that uses two PIN diodes separated by /spl lambda/ / 8. The modulator can give satisfactory suppression of undesired sidebands in a noncritical circuit, and computer simulations indicate that 20-dB suppression of the unwanted sidebands can be obtained over an octave bandwidth. It can provide even
openaire   +1 more source

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

Applied Physics Letters, 2021
Subhajit Ghosh, Kai Fu, Fariborz Kargar   +2 more
exaly  

PIN Diodes and the Theory of Microwave Operaton

1982
The PIN diode should not be thought of as something physically different from the PN junction discussed in Chapter I, but rather different in a sense of degree. In Chapter I we saw that with the abrupt junction the width of the depletion zone is inversely proportional to the resistivity of the P or N region, whichever has the lesser impurity doping ...
openaire   +1 more source

pin-Diodes

2010
Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker   +3 more
openaire   +1 more source

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

Journal of Nanoscience and Nanotechnology, 2021
Michael A Schweitz, Sang-Mo Koo
exaly  

The Transient Response of PIN Diode

Japanese Journal of Applied Physics, 1966
Susumu Nojima, Masamori Iida
openaire   +1 more source