Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias [PDF]
Sensors, 2018 A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be ...
Konstantin D. Stefanov +3 more
doaj +6 more sources
Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well Capacity [PDF]
Sensors, 2023 In this paper, the light intensity and charge holding time dependence of pinned photodiode (PD) full well capacity (FWC) are studied for our pixel structure with a buried overflow path under the transfer gate. The formulae for PDFWC derived from a simple
Ken Miyauchi +3 more
doaj +2 more sources
A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity [PDF]
Sensors, 2023 Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly,
Joo Hyoung Kim +24 more
doaj +2 more sources
Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors [PDF]
Sensors, 2023 Effects of hot pixels on pixel performance in light and dark environments have been investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors irradiated by 10 MeV protons.
Bingkai Liu +4 more
doaj +2 more sources
Revisiting the Modeling of the Conversion Gain of CMOS Image Sensors with a New Stochastic Approach [PDF]
Sensors, 2022 A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS) with at least four transistors is presented. This model, based on the fundamental principles of electronic noise,
Gil Cherniak +2 more
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A High-Performance 2.5 μm Charge Domain Global Shutter Pixel and Near Infrared Enhancement with Light Pipe Technology [PDF]
Sensors, 2020 We developed a new 2.5 μm global shutter (GS) pixel using a 65 nm process with an advanced light pipe (LP) structure. This is the world’s smallest charge domain GS pixel reported so far.
Ikuo Mizuno +7 more
doaj +2 more sources
Developments of the pinned photodiode terahertz rectifier [PDF]
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2016 This paper presents we presents a development of the structure of the pinned photodiode terahertz rectifier, in which the metal whisker of the antenna is separated from the semiconductor by a silane oxide layer, in order to reduce the surface ...
De Amicis, G. +4 more
core +3 more sources
Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling [PDF]
Sensors, 2020 A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the ...
Konstantin D. Stefanov +5 more
doaj +2 more sources
A Six-Tap 720 × 488-Pixel Short-Pulse Indirect Time-of-Flight Image Sensor for 100 m Outdoor Measurements [PDF]
SensorsLong-range, high-resolution distance measurement with high ambient-light tolerance has been achieved using a 720 × 488-resolution short-pulse indirect time-of-flight (SP-iToF) image sensor featuring six-tap, one-drain pixels fabricated by a front-side ...
Koji Itaba +4 more
doaj +2 more sources
Journal of Medical Signals and Sensors, 2020 Background: In this paper, we have presented a new custom smart CMOS image sensor (CIS) for low power wireless capsule endoscopy. Method: The proposed new smart CIS includes a 256 × 256 current mode pixels array with a new on-chip adaptive neuro-fuzzy ...
Peiman Aliparast
doaj +2 more sources