Results 91 to 100 of about 3,056 (210)
, 2015 A CMOS image sensor 101 comprises an active layer 11 of a first conductivity type arranged to be reversed biased and a pixel 20 comprising a photosensitive element comprising a well 22 of a second conductivity type and a well 21 of the first conductivity
Stefanov, Konstantin
core
Dark Current Random Telegraph Signals in Solid-State Image Sensors [PDF]
, 2013 This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DCRTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces.
Bardoux, Alain +9 more
core +4 more sources
Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.This work proposes a dual‐surface reaction strategy to optimize the interfacial contacts in organic–inorganic photodetectors. 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HAT‐CN) and ytterbium layers are designed to react with the Si surface, thus minimizing noise.
Yibo Zhang +9 more
wiley +1 more source
Focal-Plane Scale Space Generation with a 6T Pixel Architecture [PDF]
, 2016 Aiming at designing a CMOS image sensor that combines high fill factor and focal-plane implementation of instrumental image processing steps, we propose a simple modification in a standard pixel architecture in order to allow for charge redistribution
Carmona Galán, Ricardo +4 more
core +1 more source
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy
Advanced Materials, Volume 38, Issue 7, 2 February 2026.SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Laure Tailpied +8 more
wiley +1 more source
Advanced Science, Volume 13, Issue 9, 13 February 2026.A heterointerface‐functionalized Schottky photodiode (HF‐SPD) is developed to explore the photoelectric capabilities of low‐temperature oxide semiconductors. Besides the remarkable UV detection capability, the bias‐tunable photo response endows HF‐SPD with the unique wavelength selectivity.
Yuyang Cai +13 more
wiley +1 more source
Investigation of proton single-event transient in CMOS image sensor
AIP AdvancesWith the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention.
Zhigang Peng +10 more
doaj +1 more source
Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis [PDF]
, 2008 Ionizing radiation effects on CMOS image sensors (CIS) manufactured using a 0.18 µm imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and MOSFETs.
Bernard, Frédéric +4 more
core +2 more sources
Solar‐Blind Ultraviolet Photodetectors Based on Two‐Dimensional Materials and Their Heterostructures
Advanced Physics Research, Volume 5, Issue 2, February 2026.Solar‐blind ultraviolet photodetectors are crucial for diverse applications. This review comprehensively summarizes recent advances using two‐dimensional materials and their heterostructures, which offer tunable bandgaps, flexibility, and no lattice‐matching constraints.
Yu Lu +7 more
wiley +1 more source
An Event‐Driven Retinomorphic Photodiode
SmartMat, Volume 7, Issue 1, February 2026.Event‐driven biomimetic vision: Structural biomimicry and performance breakthrough. ABSTRACT Compared with traditional frame‐based machine vision sensors, event cameras are regarded as a promising direction for the next generation of visual systems, thanks to their low latency, minimal data redundancy, and high temporal responsiveness in dynamic vision
Yilin Zhao, Deyang Ji
wiley +1 more source