Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias [PDF]
, 2017 A new pixel design using pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed as a proof of principle. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is
Clarke, Andrew S. +3 more
core
Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors [PDF]
, 2018 The total ionizing dose effects on image lag in pinned photodiode CMOS image sensors are investigated thanks to various device variants in order to isolate the major radiation induced effects on the charge transfer. It is shown that the main cause of the
Durnez, Clémentine +6 more
core +3 more sources
Pixel design and evaluation in CMOS image sensor technology [PDF]
, 2009 A chip designed in a 0.18 μm CMOS Image Sensor Technology (CIS) is presented which incorporates different pixel design alternatives for Active Pixel Sensor (APS).
Liñán Cembrano, Gustavo +2 more
core
Method and Error Analysis of Heavy-ion Radiation Detection Using CMOS Image Sensors
Yuanzineng kexue jishuSpace radiation, particularly heavy ions, poses a significant threat to the reliability and longevity of electronic systems onboard satellites. Traditional dedicated radiation detectors are often costly, bulky, and power-intensive, limiting their ...
LIU Xinfei1, 2, 3, 4, WEN Lin2, 3, 4, , LI Yudong2, 3, 4, , GUO Qi2, 3, 4
doaj +1 more source
A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors. [PDF]
Sensors (Basel), 2023 Abarca A, Theuwissen A.
europepmc +1 more source
Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors [PDF]
Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current ...
Bardoux, Alain +7 more
core
PIN Photodiodes For Gamma Radiation Measurements
Радиоэлектроника и информатика, 2012 We consider usage of the commercial PIN photodiodes as detectors for gamma-radiation. We describe the low-noise electronic circuit for detector module using BPW-34 photodiode. Theoretical and experimental results for counting and spectrometry modes using the developed detector module are presented.
M.A. Khazhmuradov +2 more
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A Comprehensive Methodology for Optimizing Read-Out Timing and Reference DAC Offset in High Frame Rate Image Sensing Systems. [PDF]
Sensors (Basel), 2023 Jun J.
europepmc +1 more source
Near-infrared germanium PIN-photodiodes with >1A/W responsivity
Light: Science & ApplicationsAbstractEven though efficient near-infrared (NIR) detection is critical for numerous applications, state-of-the-art NIR detectors either suffer from limited capability of detecting incoming photons, i.e., have poor spectral responsivity, or are made of expensive group III-V non-CMOS compatible materials.
Hanchen Liu +8 more
openaire +4 more sources
A platform for integrated spectrometers based on solution-processable semiconductors. [PDF]
Light Sci Appl, 2023 Li Y +9 more
europepmc +1 more source