Results 161 to 170 of about 3,056 (210)

Radon measurements with a PIN photodiode

Applied Radiation and Isotopes, 2006
Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface ...
A, Martín-Martín, J L, Gutiérrez-Villanueva, J M, Muñoz, M, García-Talavera, G, Adamiec, M P, Iñiguez   +5 more
openaire   +2 more sources

Analytical Modeling of Pinning Process in Pinned Photodiodes

IEEE Transactions on Electron Devices, 2018
In this paper, the pinning process of pinned photodiodes (PPDs) is described by a new analytical model, assuming the PPD to be composed of inner and junction regions. There are two definitions of the pinning potential: maximum conduction band potential variation ( $\Delta \varphi _{M}$ ) and maximum electron quasi-fermi level potential variation (
Hamzeh Alaibakhsh, Mohammad Azim Karami
openaire   +1 more source

Visible-blind GaN PIN photodiodes

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), 2002
The uniqueness of the nitrides for detectors lies in their wide bandgaps that can be tailored by varying the composition of the quaternary alloy AlInGaN. We report on the performance of GaN PIN photodiodes grown by MOVPE with various intrinsic region thicknesses.
G.M. Smith, K.S. Boutros, V.M. Phanse, M.F. Chriss, F.D. Tamweber   +4 more
openaire   +1 more source

Novel black silicon PIN photodiodes

SPIE Proceedings, 2006
The many advantages of silicon such as low cost, abundancy and a level of maturity that allows for very large scale integration, means that silicon is the most commonly used semiconductor in microelectronics and optoelectronic devices. Silicon, however, has one disadvantage, this being that it is unable to absorb light greater than 1100 nm.
Aoife M. Moloney, Liam Wall, Alan Mathewson, Gerard Healy, J. Carlton Jackson   +4 more
openaire   +1 more source

Electrical autocorrelation of pin photodiodes

SPIE Proceedings, 1999
As we move towards the Tera era it is important to understand how to make measurements in this frequency domain. Over the past twenty years measurement techniques in this area have been developing. The main technique has been electro-optic sampling and probing. In this technique a fast laser producing a train of optical pulses (∼1ps).
Anthony J. Vickers, Ercan Ucgun, Majid A. Hassan, Richard A. Dudley, Geoff Hill   +4 more
openaire   +1 more source

Radiation-damaged simulation PIN photodiodes

Semiconductor Science and Technology, 2006
The physical processes taking place in PIN photodiodes exposed to spatial radiation have been investigated in the infrared band. The modelling and simulation of the diodes was done by means of numerical algorithms using the coupled Poisson and continuity equation to obtain the behaviour of electronic devices.
M A Cappelletti, U Urcola, E L Peltzer y Blancá   +2 more
openaire   +1 more source

Radiation Testing of PIN Photodiodes

IEEE Transactions on Nuclear Science, 1978
PIN photodiodes representative of commercially available device types were radiation tested in total dose, neutron fluence, and ionization pulse environments to examine the vulnerability mechanisms that occur. Also included in the testing was a special epitaxial device that was designed to have a small ionization-sensitive volume.
A. H. Kalma, W. H. Hardwick
openaire   +1 more source

PIN photodiode spurious noise characterization

2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC), 2017
The optical hyperfine pumping clock approach relies on the detection of a low level fluorescence. The clock stability is a function of the signal-to-noise ratio (SNR). This paper exhaustively analyzes the properties of spurious noise in the high-gain trans-impedance amplification of the low noise PIN photodiode signal.
R. Schmeissner, A. Maillard, P. Perez, M. Baldy   +3 more
openaire   +1 more source

Highly stable silicon pin photodiode

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
Abstract Silicon photodiodies have several interesting advantages as scintillation detectors. Recently the manufacturing techniques for making photodiodes have been greatly improved. Furthermore the selection of optimum operating parameters for the use of photodiodes and their stability are very important.
K. Yamamoto, Y. Fujii, Y. Kotooka, T. Katayama   +3 more
openaire   +1 more source

Modeling CMOS PIN photodiode using COMSOL

2012 24th International Conference on Microelectronics (ICM), 2012
Modeling semiconductor devices has become mandatory in most challenging research activity. Finding a powerful tool that models these devices represents a goal of these users. In this work, Silicon PIN photodiode is designed using complementary metal-oxide semiconductor (CMOS) Technology.
Mohamad Hamady, Ehsan Kamrani, Mohamad Sawan   +2 more
openaire   +2 more sources