Results 171 to 180 of about 3,056 (210)
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Radiation damage in PIN-photodiodes
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988Abstract The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicability as beam loss monitors for the HERA p-ring. The results indicate that photodiodes can withstand doses of 5×10 3 Gy without any problems, except a small increase of dark currents. Therefore, these diodes could be used as loss monitors in HERA
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RF interference effects on PIN photodiodes
IEEE Transactions on Electromagnetic Compatibility, 1995RFI effects on PIN diodes were studied experimentally for various light powers. It is shown that by operating a diode in a photovoltaic mode it is much more susceptible to RFI than by operating it in a photoconductive mode. The RF-frequency and RF-power dependences of the interference effect are illustrated.
null Cheng-Kuang Liu +1 more
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Drift-enhanced dual-absorption PIN photodiodes
IEEE Photonics Technology Letters, 2005A new vertically illuminated photodetector design that eases the bandwidth-efficiency limitation of conventional photodiodes for long-wavelength applications is reported. This detector design incorporates dual absorption regions and a wide bandgap drift enhancement layer for high speed and efficiency.
R. Sankaralingam, P. Fay
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PDL optimization in waveguide MQW pin photodiodes
Numerical Simulation of Optoelectronic Devices, 2014, 2014In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.
Gan Zhou, Patrick Runge
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4H-SiC PIN Recessed Window Avalanche Photodiode
LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007We report 4H-SiC p-i-n recessed window avalanche photodiodes with low dark current and high quantum efficiency. For a circular device of 250 mum diameter, the device demonstrated a responsivity of ~135.5 mW/A (external quantum efficiency = ~64%), a dark current ~90 pA (~0.183 mum/cm2) at a photocurrent gain of 1000, and an excess noise factor k of ...
Han-Din Liu +5 more
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High bandwidth-efficiency long-wavelength PIN photodiodes
International Conference on Indium Phosphide and Related Materials, 2005., 2005A new drift-enhanced dual-absorption photodetector design that achieves a high bandwidth-efficiency product is reported. Photodetectors fabricated using this design achieved bandwidths of 30 GHz at 1.55 /spl mu/m with a responsivity of 0.82 A/W for a bandwidth-efficiency product of 19.7 GHz.
R. Sankaralingam, P. Fay
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Effect and Limitation of Pinned Photodiode
IEEE Transactions on Electron Devices, 2016The pinned photodiode (PPD) is the primary technology for image sensors and used in almost all charge-coupled device image sensors and CMOS image sensors. This paper discusses the effect and limitation of PPD, especially dark current and electronic shuttering.
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Critical optical power density in PIN-photodiodes
International Multi-Conference on Systems, Sygnals & Devices, 2012PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF-performance of PIN photodiodes is described.
M. Meister +4 more
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COMPARISON OF NÜR-PIN PHOTODIODE AND BPW34 PIN PHOTODIODE
RAP Conference Proceedings, 2020Emre Doganci +2 more
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PIN avalanche photodiodes model for circuit simulation
IEEE Journal of Quantum Electronics, 1996A circuit model of PIN avalanche photodiodes (APD's) based on the carrier rate equations for circuit simulation is presented. This model is for dc, ac, and transient analysis. As an example, an In/sub 0.53/Ga/sub 0.47/As-InP PIN APD is simulated.
null Weiyou Chen, null Shiyong Liu
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