Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola +12 more
core +3 more sources
Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging
Sensors, 2016 This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature.
Tomislav Resetar +6 more
doaj +1 more source
Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications
IEEE Journal of the Electron Devices Society, 2018 We discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD dimension and shape to assure fast lateral charge transfer and on the ...
Fabio Acerbi +7 more
doaj +1 more source
Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]
, 2010 This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Cervantes, Paola +6 more
core +1 more source
Plasma‐Optical Effect in GaAs PIN Photodiodes [PDF]
Active and Passive Electronic Components, 1992 This paper is devoted to the analysis of the Plasma‐Optical Effect in GaAs PIN photodiodes operating at the infrared range. An approximated expression for the variation of the refractive index in the intrinsic zone of a AsGa PIN photodiode is obtained. This variation is induced by the charge of the device.
M. A. Grado Caffaro, M. Grado Caffaro
openaire +2 more sources
Ultra-Low Capacitance Spot PIN Photodiodes
IEEE Photonics Journal, 2023 Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 μm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the surface as anodes. Devices with N+ cathode and N+/N-well cathode are compared. A
Bernhard Goll +2 more
openaire +2 more sources
An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
IEEE Journal of the Electron Devices Society, 2015 An improved analytical model for quantifying the full well capacity in pinned photodiode (PPD) CMOS image sensors is proposed. The model captures the characteristics of the realistic technology-induced vertical doping nonuniformity in photon sensing N ...
Chen Cao +4 more
doaj +1 more source
Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]
, 2013 This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Cervantes, Paola +4 more
core +2 more sources
Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors
IEEE Journal of the Electron Devices Society, 2016 The pinning voltage is a key design parameter of pinned photodiode CMOS image sensors which significantly affects the device performances and which is often used by manufacturers to monitor production lines and for the optimization of technological ...
Alice Pelamatti +6 more
doaj +1 more source
Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]
, 2012 CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Allegret, Stephane +5 more
core +1 more source