Results 31 to 40 of about 3,056 (210)
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2011 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Cervantes, Paola +7 more
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High Conversion-Gain Pinned-Photodiode Pump-Gate Pixels in 180-nm CMOS Process
IEEE Journal of the Electron Devices Society, 2017 This paper presents the design and characterization of high conversion-gain pixels in a 180-nm CMOS image sensor process. By reducing overlapping capacitance between a floating diffusion and transfer gate, output-referred pixel conversion gain as high as
Song Chen +3 more
doaj +1 more source
Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter [PDF]
, 2018 The CIS115, the imager selected for the JANUS camera on ESA’s JUICE mission to Jupiter, is a Four Transistor (4T) CMOS Image Sensor (CIS) fabricated in a 0.18 µm process.
Allanwood, E. A. H. +6 more
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IEEE Access, 2020 This article analyzes the performance of pinned photodiode (PPD) for Time-of-Flight(ToF) applications on high resistivity epitaxial wafers. Due to its wide depletion region, high epitaxial resistivity PPDs feature some key advantages in collecting ...
Xuanbin Fang +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Thyristors operated at switching point are highly sensitive to external physical signals such as light or temperature. However, due to the instability of sensitive switching point, conventional thyristors are commonly used as optical switches and hardly ...
Keyang Sun +4 more
doaj +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
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RETRACTED: Research on dispersion compensation using avalanche photodiode and pin photodiode [PDF]
IET Collaborative Intelligent Manufacturing, 2020 Abstract With the growing demand for usage among Internet users, inventions related to increase in the capacity and bandwidth of transmission channels are more significant nowadays. This continuously growing demand can be fulfilled by using the optical fibre for transmission of signals instead of the wireless mode of transmission, due
Yanxia Ma +4 more
openaire +2 more sources
Sensors, 2017 Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark
Yuanyuan Xue +9 more
doaj +1 more source
Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors
IEEE Journal of the Electron Devices Society, 2021 The influence of transfer gate (TG) doping profile on dark current and full well capacity (FWC) has been investigated in this article. By analyzing the non-uniform doped TG channel in 4T pixel, a potential profile with a barrier is extracted at TG off ...
Jiangtao Xu, Quanmin Chen, Zhiyuan Gao
doaj +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
core +1 more source