Results 41 to 50 of about 3,056 (210)

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

AIP Advances, 2016
The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the
Zujun Wang, Wuying Ma, Shaoyan Huang, Zhibin Yao, Minbo Liu, Baoping He, Jing Liu, Jiangkun Sheng, Yuan Xue   +8 more
doaj   +1 more source

Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]

, 2012
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, Alain, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Petit, Sophie, Rolland, Guy, Saint-Pé, Olivier, Virmontois, Cédric   +7 more
core   +3 more sources

Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

IEEE Journal of the Electron Devices Society, 2014
A method to extract the pinned photodiode (PPD) physical parameters inside a CMOS image sensor pixel array is presented. The proposed technique is based on the Tan et al. pinning voltage characteristic. This pixel device characterization can be performed
Vincent Goiffon, Magali Estribeau, Julien Michelot, Paola Cervantes, Alice Pelamatti, Olivier Marcelot, Pierre Magnan   +6 more
doaj   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain, Corbière, Franck, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Virmontois, Cédric   +5 more
core   +3 more sources

Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]

, 2011
This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre, Martin-Gonthier, Philippe   +1 more
core   +1 more source

Theoretical evaluation of MTF and charge collection efficiency in CCD and CMOS image sensor [PDF]

, 2009
Classical models used to calculate the Modulation Transfer function (MTF) of a solid-state image sensor generally use a sinusoidal type of illumination.
Djité, Ibrahima, Estribeau, Magali, Magnan, Pierre, Petit, Sophie, Rolland, Guy, Saint-Pé, Olivier   +5 more
core   +1 more source

A Time-of-Flight Range Image Sensor With Background Canceling Lock-in Pixels Based on Lateral Electric Field Charge Modulation

IEEE Journal of the Electron Devices Society, 2015
This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-in pixels with background light canceling capability. The proposed lock-in pixel uses MOS gate-induced lateral electric field control of depleted potential of pinned
Sang-Man Han, Taishi Takasawa, Keita Yasutomi, Satoshi Aoyama, Keiichiro Kagawa, Shoji Kawahito   +5 more
doaj   +1 more source

Research-grade CMOS image sensors for remote sensing applications [PDF]

, 2004
Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle.
Belliot, Pierre, Corbière, Franck, Davancens, Robert, Estribeau, Magali, Larnaudie, Franck, Magnan, Pierre, Martin-Gonthier, Philippe, Saint-Pé, Olivier, Tulet, Michel   +8 more
core   +1 more source

Realization and opto-electronic Characterization of linear Self-Reset Pixel Cells for a high dynamic CMOS Image Sensor [PDF]

Advances in Radio Science, 2019
Conventional CMOS image sensors with a linear transfer characteristic only have a limited dynamic range (DR) of about 60–70 dB. To extend the dynamic range considerably, the already successfully demonstrated concept of a linear self-reset pixel ...
S. Hirsch, M. Strobel, W. Klingler, J. D. Schulze Spüntrup, Z. Yu, J. N. Burghartz   +5 more
doaj   +1 more source

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes [PDF]

, 2011
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications.
Carrere, Jean-Pierre, Goiffon, Vincent, Magnan, Pierre, Place, Sébastien, Roy, François   +4 more
core   +1 more source