Results 61 to 70 of about 3,056 (210)

Waveguide-integrated pin photodiode on InP

Electronics Letters, 1987
An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07dB/?m. For detectors with sufficient length (>300?m) a responsivity of 0.81 A/W was achieved at 1.3 ?m wave-length.
C. Bornholdt, W. Döldissen, F. Fiedler, R. Kaiser, W. Kowalsky   +4 more
openaire   +1 more source

Some Results on PIN and ITO Photodiodes [PDF]

Active and Passive Electronic Components, 1992
In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photodiode are performed and compared to experimental considerations. In addition, an ITO structure on a layer n‐type GaAs is examined.
M. A. Grado Caffaro, M. Grado Caffaro
openaire   +2 more sources

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source

Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification

Sensors, 2018
This paper presents an in-situ storage topology for ultra-high-speed burst mode imagers, enabling low noise operation while keeping a high frame depth.
Linkun Wu, David San Segundo Bello, Philippe Coppejans, Jan Craninckx, Andreas Süss, Maarten Rosmeulen, Piet Wambacq, Jonathan Borremans   +7 more
doaj   +1 more source

Characterisation of a novel reverse-biased PPD CMOS image sensor [PDF]

, 2017
A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes ...
A.D. Holland, A.S. Clarke, J. Ivory, J.D.E. Beynon, K.D. Stefanov, K.D. Stefanov, M. Downing, N. Teranishi, S.M. Sze   +8 more
core   +1 more source

Ultra‐Flexible Dual‐Band Organic Photodetectors for Visible and Near‐Infrared Sensing

Advanced Optical Materials, EarlyView.
An ultra‐flexible dual‐band organic photodetector with a total thickness of 5.6 µm for bio‐sensing is developed. It selectively detects visible and near‐infrared light with high sensitivity by switching the voltage. Peripheral oxygen saturation (SpO2) measurement is demonstrated using the device attached to a finger under a single light source by ...
Sachi Awakura, Hiroaki Jinno, Yusaku Tagawa, Ryota Fukuzawa, Masahito Takakuwa, Takao Someya, Tomoyuki Yokota   +6 more
wiley   +1 more source

Enabling Real‐Time Shape‐Sensing in Soft Robots via a Miniaturized, Single‐Signal, Color‐Tuned Soft Optical Sensor

Advanced Robotics Research, EarlyView.
A miniaturized soft optical sensor that uses thin film color tuning enables real‐time 3D shape‐sensing from a single red–green–blue (RGB) signal. When integrated into a soft robot, it enables closed‐loop control and autonomous navigation in a phantom lung environment without the need for onboard electronics, achieving sub‐millimeter accuracy through ...
Frank Juliá Wise, Yitong Lu, Daniel Van Lewen, Riley Applebaum, Bianca Andrada, Johnathan Reamer, Sheila Russo   +6 more
wiley   +1 more source

Squeezing out the last 1 nanometer of water: A detailed nanomechanical study [PDF]

, 2014
In this study, we present a detailed analysis of the squeeze-out dynamics of nanoconfined water confined between two hydrophilic surfaces measured by small-amplitude dynamic atomic force microscopy (AFM).
Chapman, R A, Healy, S, Kata, S G, Robertson, A, Somani, B K   +4 more
core   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Column-Parallel Correlated Multiple Sampling Circuits for CMOS Image Sensors and Their Noise Reduction Effects

Sensors, 2010
For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors.
Shoji Kawahito, Shinya Itoh, Satoshi Aoyama, Sungho Suh   +3 more
doaj   +1 more source