Results 71 to 80 of about 3,056 (210)

Low-frequency noise impact on CMOS image sensors [PDF]

open access: yes, 2009
CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre   +1 more
core  

Advances on CMOS image sensors [PDF]

open access: yes, 2016
This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades.
Gouveia, Luiz
core   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

open access: yesAdvanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K   +7 more
wiley   +1 more source

Selective Charge Extraction Allows Fast Photomultiplication and Imaging in Rigid and Ultra‐Flexible SWIR Organic Photodiodes

open access: yesAdvanced Energy Materials, EarlyView.
SWIR donor polymer TQ‐3T allows photomultiplication in OPD in 1:1 ratio with NFA Y6, achieving EQEs > 1100% at ‐10 V. Microseconds response times are retained, amongst the lowest for photomultiplication. As proof of concept, we demonstrate ultrathin and flexible PM‐OPDs based on our TQ‐3T:Y6 as a flexible pulse oximeter as well as a conformable image ...
Matilde Brunetta   +23 more
wiley   +1 more source

Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]

open access: yes, 2010
Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
Havard, E.   +2 more
core   +1 more source

Optical Coherence Tomography for High‐Precision Industrial Inspection in Industry 4.0: Advances, Challenges, and Future Trends

open access: yesLaser &Photonics Reviews, EarlyView.
This review examines how optical coherence tomography transforms industrial inspection by delivering real‐time, micrometer‐resolution, depth‐resolved imaging. It surveys applications across display manufacturing, thin films, microelectronics, laser processing, and coatings, evaluates performance against conventional techniques, and highlights emerging ...
Nipun Shantha Kahatapitiya   +7 more
wiley   +1 more source

High performance silicon lateral PIN photodiode

open access: yesIOP Conference Series: Earth and Environmental Science, 2013
Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200–1000 nm wavelength range was demonstrated. The results obtained for responsivity,
S Kalthom Tasirin   +3 more
openaire   +1 more source

Using Lignin and Spent Coffee Grounds as Bio‐Additives in 3D‐Printable Poly Lactic Acid/Multi‐Walled Carbon Nanotube Composites for Advanced Electronic Applications

open access: yesPolymer Composites, EarlyView.
Bio‐based additives derived from lignin and spent coffee grounds (SCG) are used to enhance MWCNT dispersion in PLA composites, enabling improved electrical conductivity and reliable in material extruded strain‐gauge sensors. ABSTRACT In this work, three bio‐based additives, lignin, spent coffee grounds (SCG), and oil extracted from SCG (Ox‐SCG) were ...
Silvia Lage‐Rivera   +6 more
wiley   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

open access: yesIEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao   +8 more
doaj   +1 more source

Single Event Effects in 4T Pinned Photodiode Image Sensors [PDF]

open access: yes, 2013
This paper describes how Single Event Effects (SEEs) produced by heavy ions disturb the operation of Pinned Photodiode (PPD) CMOS Image Sensors (CISs) in the frame of space and nuclear applications.
Goiffon, Vincent   +5 more
core   +2 more sources

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