A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity [PDF]
Sensors, 2023 Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly,
Joo Hyoung Kim +24 more
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Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias [PDF]
Sensors, 2018 A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be ...
Konstantin D. Stefanov +3 more
doaj +5 more sources
Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling [PDF]
Sensors, 2020 A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the ...
Konstantin D. Stefanov +5 more
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Design of a Time-of-Flight Sensor With Standard Pinned-Photodiode Devices Toward 100-MHz Modulation Frequency [PDF]
IEEE Access, 2019 We present an indirect Time-of-Flight (ToF) sensor based on standard pinned-photodiode (PPD) devices and design guides to pave the way for the development of a ToF pixel operating at 100 MHz modulation frequency. The standard PPDs are established well as
Seunghyun Lee +4 more
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Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors [PDF]
IEEE Journal of the Electron Devices Society, 2014 A method to extract the pinned photodiode (PPD) physical parameters inside a CMOS image sensor pixel array is presented. The proposed technique is based on the Tan et al. pinning voltage characteristic. This pixel device characterization can be performed
Vincent Goiffon +6 more
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Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors [PDF]
IEEE Journal of the Electron Devices Society, 2016 The pinning voltage is a key design parameter of pinned photodiode CMOS image sensors which significantly affects the device performances and which is often used by manufacturers to monitor production lines and for the optimization of technological ...
Alice Pelamatti +6 more
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Optimization of Pinned Photodiode Pixels for High-Speed Time of Flight Applications [PDF]
IEEE Journal of the Electron Devices Society, 2018 We discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD dimension and shape to assure fast lateral charge transfer and on the ...
Fabio Acerbi +7 more
doaj +3 more sources
Thin-film image sensors with a pinned photodiode structure [PDF]
Nature Electronics, 2023 Jiwon Lee +2 more
exaly +3 more sources
IEEE Access, 2020 This article analyzes the performance of pinned photodiode (PPD) for Time-of-Flight(ToF) applications on high resistivity epitaxial wafers. Due to its wide depletion region, high epitaxial resistivity PPDs feature some key advantages in collecting ...
Xuanbin Fang +3 more
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Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors
IEEE Journal of the Electron Devices Society, 2020 The output features of pixels in CMOS image sensors (CISs) are influenced by different exposure conditions. This article presents an analytical model to describe the output characteristics of the exposure process in pinned photodiode (PPD) CMOS image ...
Jing Gao +4 more
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