Results 11 to 20 of about 289 (114)

Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects [PDF]

Sensors, 2017
Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark
Yuanyuan Xue, Zujun Wang, Wei Chen, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong, Junshan Jin   +9 more
doaj   +2 more sources

The Effect of Pixel Design and Operation Conditions on Linear Output Range of 4T CMOS Image Sensors [PDF]

Sensors
We analyze several factors that affect the linear output range of CMOS image sensors, including charge transfer time, reset transistor supply voltage, the capacitance of integration capacitor, the n-well doping of the pinned photodiode (PPD) and the ...
Wenxuan Zhang, Xing Xu, Zhengxi Cheng
doaj   +2 more sources

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method [PDF]

Sensors, 2017
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao, Honyih Tu, Thomas Meng-Hsiu Wu, Kuo-Yu Chou, Shang-Fu Yeh, Chin Yin, Chih-Lin Lee   +6 more
doaj   +2 more sources

Design and Implementation of A CMOS Light Pulse Receiver Cell Array for Spatial Optical Communications [PDF]

Sensors (Basel), 2011
A CMOS light pulse receiver (LPR) cell for spatial optical communications is designed and evaluated by device simulations and a prototype chip implementation. The LPR cell consists of a pinned photodiode and four transistors. It works under sub-threshold
Andoh, Michinori, Hamai, Moeta, Itoh, Shinya, Kawahito, Shoji, Sarker, Md. Shakowat Zaman, Takai, Isamu, Yasutomi, Keita   +6 more
core   +4 more sources

Retinomorphic hardware for in‐sensor computing

InfoMat, Volume 5, Issue 9, September 2023., 2023
The retinomorphic devices to construct bio‐inspired visual in‐sensor computing systems that can overcome the significant energy consumption, time latency, and additional hardware costs by conventional computer‐based vision system are summarized. At the meantime, the existing problems and some solutions to guide its development in the future was ...
Guangdi Feng, Xiaoxu Zhang, Bobo Tian, Chungang Duan   +3 more
wiley   +1 more source

Highly Efficient and Stable Self‐Powered Mixed Tin‐Lead Perovskite Photodetector Used in Remote Wearable Health Monitoring Technology

Advanced Science, Volume 10, Issue 5, February 14, 2023., 2023
A novel functional passivating antioxidant strategy is introduced to simultaneously improve crystallization, restrain Sn2+ oxidization, and reduce defects in mixed tin‐lead (MSP) perovskite films. This work highlights the first flexible photodiode using MSP perovskite with remarkable performance. Finally, the remote wearable health monitoring (RWHM) is
Fengcai Liu, Kai Liu, Saqib Rafique, Zengyi Xu, Wenqing Niu, Xiaoguo Li, Yifan Wang, Liangliang Deng, Jiao Wang, Xiaofei Yue, Tao Li, Jun Wang, Paola Ayala, Chunxiao Cong, Yajie Qin, Anran Yu, Nan Chi, Yiqiang Zhan   +17 more
wiley   +1 more source

Dual Organic Spacer Cation Quasi‐2D Sn–Pb Perovskite for Solar Cells and Near‐Infrared Photodetectors Application

Advanced Photonics Research, Volume 3, Issue 9, September 2022., 2022
Herein, quasi‐2D Sn–Pb perovskite with mixed 2‐phenylethylammonium (PEA+) and butylammonium (BA+) cations exhibits an absorption spectrum extended to 1000 nm. Solar cells based on this quasi‐2D perovskite present high stability, with a power conversion efficiency (PCE) of ≈10% and an open‐circuit voltage (Voc) of 0.808 V. When applied as near infrared (
Ya Wang, Xiaoyun Lin, Renlai Zhou, Tong Chen, Qiang Lou, Qian Li, Hang Zhou   +6 more
wiley   +1 more source

An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

IEEE Journal of the Electron Devices Society, 2015
An improved analytical model for quantifying the full well capacity in pinned photodiode (PPD) CMOS image sensors is proposed. The model captures the characteristics of the realistic technology-induced vertical doping nonuniformity in photon sensing N ...
Chen Cao, Benlan Shen, Bing Zhang, Longsheng Wu, Junfeng Wang   +4 more
doaj   +1 more source

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]

, 2013
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Cervantes, Paola, Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre, Pelamatti, Alice   +4 more
core   +2 more sources

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola, Corbière, Franck, Estribeau, Magali, Gaillardin, Marc, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Marcandella, Claude, Marcelot, Olivier, Martin-Gonthier, Philippe, Molina, Romain, Paillet, Philippe, Virmontois, Cédric   +12 more
core   +3 more sources