Results 41 to 50 of about 289 (114)
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.This article introduces a multiresponse image fusion method tailored for a high dynamic range (HDR) CMOS image sensor (CIS), which combines dual conversion gain (DCG) and logarithmic responses within a single exposure. Utilizing the imaging characteristics of the sensor together with a proposed quality perceptive strategy, the presented fusion method ...
Shanshan Lou +5 more
wiley +1 more source
High-speed global shutter CMOS machine vision sensor with high dynamic range image acquisition and embedded intelligence [PDF]
, 2012 High-speed imagers are required for industrial applications, traffic monitoring, robotics and unmanned vehicles, moviemaking, etc. Many of these applications call also for large spatial resolution, high sensitivity and the ability to detect images with ...
Domínguez Castro, Rafael +8 more
core +1 more source
Advanced Materials, Volume 36, Issue 33, August 15, 2024.Here, perovskite–organic heterojunction (POH) broadband photodetectors with ultra‐low noise current of 2 × 10−14 A Hz−1/2 and a high specific detectivity of 4.7 × 1012 Jones in the NIR is shown. The underlaying physical properties of the POH devices and their application as NIR pulse oximeters with high‐accuracy heartbeat monitoring at long‐distance of
Davide Nodari +11 more
wiley +1 more source
Pinned Photodiode CMOS Image Sensor\\TCAD Simulation: in-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool [PDF]
, 2017 TCAD simulations are conducted on a pinned photodiode (PPD), with the aim to reproduce the pinning voltage measurement developed by Tan \textit{et al}. A thermionic model is proposed and detailed in order to explain the exponential injection occurring at
Goiffon, Vincent +3 more
core +1 more source
Global shutter CMOS vision sensors and event cameras for on‐chip dynamic information
International Journal of Circuit Theory and Applications, Volume 52, Issue 6, Page 3052-3065, June 2024.This paper analyses mismatch and noise of a global shutter 4T‐APS implementation with a local high dynamic range algorithm for on‐chip extraction of dynamic information from a scene in 180 nm CMOS technology. Abstract The on‐chip extraction of dynamic information from a scene can be addressed with either frame‐based CMOS vision, also called smart image
Marko Jaklin +3 more
wiley +1 more source
Small, Volume 20, Issue 6, February 8, 2024.A comprehensive review on nanoparticle assembly via the balance of interparticle interactions (e.g., van der Waals, colloidal, capillary, convection, and chemical forces) and nanoparticle‐template interactions (e.g., physical confinement, chemical functionalization, additive layer‐upon‐layer) for broad applications of micropatterned surfaces.
Sayli Jambhulkar +17 more
wiley +1 more source
A Review of the Pinned Photodiode for CCD and CMOS Image Sensors [PDF]
, 2014 The pinned photodiode is the primary photodetector structure used in most CCD and CMOS image sensors.
Fossum, Eric R, Hondongwa, Donald B
core +2 more sources
Theoretical formulation and experimental validation of brightness evaluation using digital cameras [PDF]
, 2021 In this study, we formulated the brightness relation of two digital photos captured by a single digital camera and verified it experimentally. The experimental results suggested that the used zoom lens has an intrinsic error, thereby making accurate ...
Okizaki, Musashi, Shimoji, Nobuaki
core +2 more sources
Fully Depleted, Monolithic Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias [PDF]
, 2017 A new pixel design using pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed as a proof of principle. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is
Clarke, Andrew S. +3 more
core
Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors [PDF]
, 2018 The influence of pixel design on image lag is investigated by focusing on two different aspects which impact the charge transfer. First it is confirmed that the transfer gate channel doping profile strongly affects image lag. Introducing a step under the
Estribeau, Magali +5 more
core +1 more source